component
NTJD4105CT2G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTJD4105CT2G-VB
VBsemi Elec · MOSFETs · SC-70-6
NTJD4105CT2G-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated 20 V VDS with 3.28 A continuous drain current at 5 s. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20 V and a 0.45 V minimum threshold at 100 µA. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated -20 V VDS with -2.80 A continuous drain current at 5 s. |
| 4 | S2 | passive | Source of the P-channel MOSFET (Q2), rated -20 V VDS. |
| 5 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20 V and a -0.45 V minimum threshold at -100 µA. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated 20 V VDS with 9.5 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-Ch) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Ch), 5 s | ID | 3.28 | A | TJ = 150 °C; TA = 25 °C; 5 s | 1 | ||
| Continuous Drain Current (N-Ch), steady state | ID | 3.03 | A | TJ = 150 °C; TA = 25 °C; steady state | 1 | ||
| Continuous Drain Current (P-Ch), 5 s | ID | -2.8 | A | TJ = 150 °C; TA = 25 °C; 5 s | 1 | ||
| Continuous Drain Current (P-Ch), steady state | ID | -2.58 | A | TJ = 150 °C; TA = 25 °C; steady state | 1 | ||
| Continuous Drain Current (N-Ch), 5 s | ID | 2.12 | A | TJ = 150 °C; TA = 85 °C; 5 s | 1 | ||
| Continuous Drain Current (N-Ch), steady state | ID | 1.81 | A | TJ = 150 °C; TA = 85 °C; steady state | 1 | ||
| Continuous Drain Current (P-Ch), 5 s | ID | -1.72 | A | TJ = 150 °C; TA = 85 °C; 5 s | 1 | ||
| Continuous Drain Current (P-Ch), steady state | ID | -1.53 | A | TJ = 150 °C; TA = 85 °C; steady state | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 9.5 | A | 1 | |||
| Pulsed Drain Current (P-Ch) | IDM | -8.5 | A | 1 | |||
| Continuous Source Current (Diode Conduction) (N-Ch), 5 s | IS | 2.61 | A | 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) (N-Ch), steady state | IS | 2.48 | A | steady state | 1 | ||
| Continuous Source Current (Diode Conduction) (P-Ch), 5 s | IS | -1.61 | A | 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) (P-Ch), steady state | IS | -1.48 | A | steady state | 1 | ||
| Maximum Power Dissipation (N-Ch), 5 s | PD | 1.24 | W | TA = 25 °C; 5 s | 1 | ||
| Maximum Power Dissipation (N-Ch), steady state | PD | 1.17 | W | TA = 25 °C; steady state | 1 | ||
| Maximum Power Dissipation (P-Ch), 5 s | PD | 1.1 | W | TA = 25 °C; 5 s | 1 | ||
| Maximum Power Dissipation (P-Ch), steady state | PD | 0.97 | W | TA = 25 °C; steady state | 1 | ||
| Maximum Power Dissipation (N-Ch), 5 s | PD | 0.88 | W | TA = 85 °C; 5 s | 1 | ||
| Maximum Power Dissipation (N-Ch), steady state | PD | 0.75 | W | TA = 85 °C; steady state | 1 | ||
| Maximum Power Dissipation (P-Ch), 5 s | PD | 0.66 | W | TA = 85 °C; 5 s | 1 | ||
| Maximum Power Dissipation (P-Ch), steady state | PD | 0.5 | W | TA = 85 °C; steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | 130 | 170 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 170 | 220 | °C/W | steady state | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 80 | 100 | °C/W | steady state | 1 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 100 µA | 2 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | -0.45 | V | VDS = VGS, ID = -100 µA | 2 | |
| Gate-Body Leakage (N-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Gate-Body Leakage (P-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | µA | VDS = 16 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | µA | VDS = -16 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 2 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -2 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A | 2 | ||
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A | 2 | ||
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A | 2 | ||
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A | 2 | ||
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A | 2 | ||
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A | 2 | ||
| Forward Transconductance (N-Ch) | gfs | 2.6 | S | VDS = 10 V, ID = 1.13 A | 2 | ||
| Forward Transconductance (P-Ch) | gfs | 1.5 | S | VDS = -10 V, ID = -0.88 A | 2 | ||
| Diode Forward Voltage (N-Ch) | VSD | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V | 2 | |
| Diode Forward Voltage (P-Ch) | VSD | -0.8 | -1.2 | V | IS = -0.48 A, VGS = 0 V | 2 | |
| Total Gate Charge (N-Ch) | Qg | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A | 2 | |
| Total Gate Charge (P-Ch) | Qg | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A | 2 | |
| Turn-On Delay Time (N-Ch) | td(on) | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| Turn-On Delay Time (P-Ch) | td(on) | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Rise Time (N-Ch) | tr | 22 | 35 | ns | 2 | ||
| Rise Time (P-Ch) | tr | 25 | 40 | ns | 2 | ||
| Turn-Off Delay Time (N-Ch) | td(off) | 25 | 40 | ns | 2 | ||
| Turn-Off Delay Time (P-Ch) | td(off) | 15 | 25 | ns | 2 | ||
| Fall Time (N-Ch) | tf | 12 | 20 | ns | 2 | ||
| Fall Time (P-Ch) | tf | 12 | 20 | ns | 2 | ||
| Reverse Recovery Time (N-Ch) | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Time (P-Ch) | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
NTJD4105CT2G-VB - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
ntjd4105ct2g-vb-etched.step/ntjd4105ct2g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntjd4105ct2g-vb.step/ntjd4105ct2g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
72a49b28a9d7e580, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTJD4105CT2G-VB
**VBsemi Elec** · MOSFETs · SC-70-6
NTJD4105CT2G-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated 20 V VDS with 3.28 A continuous drain current at 5 s. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20 V and a 0.45 V minimum threshold at 100 µA. |
| 3 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated -20 V VDS with -2.80 A continuous drain current at 5 s. |
| 4 | S2 | passive | Source of the P-channel MOSFET (Q2), rated -20 V VDS. |
| 5 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20 V and a -0.45 V minimum threshold at -100 µA. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated 20 V VDS with 9.5 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | | | 20 | V | | 1 |
| Drain-Source Voltage (P-Ch) | VDS | -20 | | | V | | 1 |
| Gate-Source Voltage (N-Ch) | VGS | -20 | | 20 | V | | 1 |
| Gate-Source Voltage (P-Ch) | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (N-Ch), 5 s | ID | | | 3.28 | A | TJ = 150 °C; TA = 25 °C; 5 s | 1 |
| Continuous Drain Current (N-Ch), steady state | ID | | | 3.03 | A | TJ = 150 °C; TA = 25 °C; steady state | 1 |
| Continuous Drain Current (P-Ch), 5 s | ID | -2.8 | | | A | TJ = 150 °C; TA = 25 °C; 5 s | 1 |
| Continuous Drain Current (P-Ch), steady state | ID | -2.58 | | | A | TJ = 150 °C; TA = 25 °C; steady state | 1 |
| Continuous Drain Current (N-Ch), 5 s | ID | | | 2.12 | A | TJ = 150 °C; TA = 85 °C; 5 s | 1 |
| Continuous Drain Current (N-Ch), steady state | ID | | | 1.81 | A | TJ = 150 °C; TA = 85 °C; steady state | 1 |
| Continuous Drain Current (P-Ch), 5 s | ID | -1.72 | | | A | TJ = 150 °C; TA = 85 °C; 5 s | 1 |
| Continuous Drain Current (P-Ch), steady state | ID | -1.53 | | | A | TJ = 150 °C; TA = 85 °C; steady state | 1 |
| Pulsed Drain Current (N-Ch) | IDM | | | 9.5 | A | | 1 |
| Pulsed Drain Current (P-Ch) | IDM | -8.5 | | | A | | 1 |
| Continuous Source Current (Diode Conduction) (N-Ch), 5 s | IS | | | 2.61 | A | 5 s | 1 |
| Continuous Source Current (Diode Conduction) (N-Ch), steady state | IS | | | 2.48 | A | steady state | 1 |
| Continuous Source Current (Diode Conduction) (P-Ch), 5 s | IS | -1.61 | | | A | 5 s | 1 |
| Continuous Source Current (Diode Conduction) (P-Ch), steady state | IS | -1.48 | | | A | steady state | 1 |
| Maximum Power Dissipation (N-Ch), 5 s | PD | | | 1.24 | W | TA = 25 °C; 5 s | 1 |
| Maximum Power Dissipation (N-Ch), steady state | PD | | | 1.17 | W | TA = 25 °C; steady state | 1 |
| Maximum Power Dissipation (P-Ch), 5 s | PD | | | 1.1 | W | TA = 25 °C; 5 s | 1 |
| Maximum Power Dissipation (P-Ch), steady state | PD | | | 0.97 | W | TA = 25 °C; steady state | 1 |
| Maximum Power Dissipation (N-Ch), 5 s | PD | | | 0.88 | W | TA = 85 °C; 5 s | 1 |
| Maximum Power Dissipation (N-Ch), steady state | PD | | | 0.75 | W | TA = 85 °C; steady state | 1 |
| Maximum Power Dissipation (P-Ch), 5 s | PD | | | 0.66 | W | TA = 85 °C; 5 s | 1 |
| Maximum Power Dissipation (P-Ch), steady state | PD | | | 0.5 | W | TA = 85 °C; steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | | 130 | 170 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | 170 | 220 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 80 | 100 | °C/W | steady state | 1 |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 0.45 | | 1 | V | VDS = VGS, ID = 100 µA | 2 |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | | -0.45 | V | VDS = VGS, ID = -100 µA | 2 |
| Gate-Body Leakage (N-Ch) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Gate-Body Leakage (P-Ch) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | | | 1 | µA | VDS = 16 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | | | µA | VDS = -16 V, VGS = 0 V | 2 |
| On-State Drain Current (N-Ch) | ID(on) | 2 | | | A | VDS ≥ 5 V, VGS = 4.5 V | 2 |
| On-State Drain Current (P-Ch) | ID(on) | -2 | | | A | VDS ≤ -5 V, VGS = -4.5 V | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | | | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A | 2 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | | | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | | | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A | 2 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | | | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | | | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A | 2 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | | | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A | 2 |
| Forward Transconductance (N-Ch) | gfs | 2.6 | | | S | VDS = 10 V, ID = 1.13 A | 2 |
| Forward Transconductance (P-Ch) | gfs | 1.5 | | | S | VDS = -10 V, ID = -0.88 A | 2 |
| Diode Forward Voltage (N-Ch) | VSD | | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V | 2 |
| Diode Forward Voltage (P-Ch) | VSD | | -0.8 | -1.2 | V | IS = -0.48 A, VGS = 0 V | 2 |
| Total Gate Charge (N-Ch) | Qg | | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A | 2 |
| Total Gate Charge (P-Ch) | Qg | | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A | 2 |
| Turn-On Delay Time (N-Ch) | td(on) | | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 |
| Turn-On Delay Time (P-Ch) | td(on) | | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |
| Rise Time (N-Ch) | tr | | 22 | 35 | ns | | 2 |
| Rise Time (P-Ch) | tr | | 25 | 40 | ns | | 2 |
| Turn-Off Delay Time (N-Ch) | td(off) | | 25 | 40 | ns | | 2 |
| Turn-Off Delay Time (P-Ch) | td(off) | | 15 | 25 | ns | | 2 |
| Fall Time (N-Ch) | tf | | 12 | 20 | ns | | 2 |
| Fall Time (P-Ch) | tf | | 12 | 20 | ns | | 2 |
| Reverse Recovery Time (N-Ch) | trr | | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 |
| Reverse Recovery Time (P-Ch) | trr | | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `NTJD4105CT2G-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `ntjd4105ct2g-vb-etched.step` / `ntjd4105ct2g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntjd4105ct2g-vb.step` / `ntjd4105ct2g-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ntjd4105ct2g-vb-datasheet.pdf) (10 pp, sha256 `72a49b28a9d7e580`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntjd4105ct2g-vb-datasheet.pdf)