component
NTH4L070N120M3S
Public Made by Adomby adom
onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+98−8@@ -1,13 +1,108 @@ {+ "schema_version": 1,+ "type": "component", "slug": "nth4l070n120m3s",+ "title": "NTH4L070N120M3S",+ "brief": "onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "onsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "silicon carbide (sic) devices", "nth4l070n120m3s" ],+ "component": {+ "mpn": "NTH4L070N120M3S",+ "manufacturer": "onsemi",+ "package": "TO-247-4L",+ "pin_count": 4,+ "category": "Silicon Carbide (SiC) Devices",+ "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602734235388702720",+ "parts": {+ "symbol": "nth4l070n120m3s.kicad_sym",+ "footprint": "nth4l070n120m3s.kicad_mod",+ "model_3d": "nth4l070n120m3s.glb",+ "model_3d_step": "nth4l070n120m3s.step",+ "lbr": "nth4l070n120m3s.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "S1",+ "type": "passive",+ "description": "Driver Source (Kelvin source). Low-inductance source reference used by the gate driver only; carries only gate-loop return current, not the main drain current. Improves switching performance by decoupling driver return from power-source parasitic inductance."+ },+ {+ "number": "2",+ "name": "G",+ "type": "input",+ "description": "Gate. Controls the MOSFET channel. Recommended V_GS operating range \u22123 V to +18 V; absolute max V_GS = \u221210 V / +22 V. Typical V_GS(th) = 2.9 V (I_D = 7 mA). Total gate charge Q_G(tot) \u2248 57 nC at V_GS = \u22123/+18 V, V_DS = 800 V."+ },+ {+ "number": "3",+ "name": "D",+ "type": "passive",+ "description": "Drain. V_DSS = 1200 V (breakdown); continuous I_D = 34 A at T_C = 25 \u00b0C (24 A at T_C = 100 \u00b0C); pulsed I_DM = 98 A. Also connected to the metal mounting tab of the TO-247-4L package."+ },+ {+ "number": "4",+ "name": "S2",+ "type": "passive",+ "description": "Power Source. Main source lead that carries the drain-to-source load current back to the power-loop return. Integral body diode (source-to-drain) has V_SD \u2248 4.7 V typ at I_SD = 15 A, V_GS = \u22123 V; continuous I_S = 31 A."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602734235388702720",+ "pages": 8,+ "sha256": "bd736a1bc627d172",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "onsemi",+ "Package": "TO-247-4L",+ "Category": "Silicon Carbide (SiC) Devices",+ "Pins": "4"+ }+ },+ "variants": [+ {+ "mpn": "NTH4L070N120M3S",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "nth4l070n120m3s"+ ],+ "discovery_pitch": "NTH4L070N120M3S (onsemi) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +120,5 @@ "docs/nth4l070n120m3s-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }