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NTGS5120PT1G-VB

VBsemi Elec · MOSFETs · TSOP-6

NTGS5120PT1G-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel MOSFET (VDS max 60 V), internally common with pins 2, 5 and 6.
2 D passive Drain of the N-channel MOSFET (VDS max 60 V), internally common with pins 1, 5 and 6.
3 G input Gate of the N-channel MOSFET, rated for VGS of ±20 V maximum.
4 S passive Source of the N-channel MOSFET, continuous source current (diode conduction) 6 A.
5 D passive Drain of the N-channel MOSFET (VDS max 60 V), internally common with pins 1, 2 and 6.
6 D passive Drain of the N-channel MOSFET (VDS max 60 V), internally common with pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: NTGS5120PT1G-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ntgs5120pt1g-vb-etched.step / ntgs5120pt1g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntgs5120pt1g-vb.step / ntgs5120pt1g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 5a8d7afc6a4d7336, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF