component
NTGS4141NT1G
Public Made by Adomby adom
onsemi MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTGS4141NT1G
onsemi · MOSFETs · TSOP-6
NTGS4141NT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
| 3 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-to-source voltage limit of ±20 V. |
| 4 | Source | passive | Source terminal of the N-channel MOSFET; source (body diode) current IS is rated at 2.0 A. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | Steady state, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 3.6 | A | Steady state, TA = 85°C | 1 | ||
| Continuous Drain Current | ID | 7 | A | t ≤ 10 s, TA = 25°C | 1 | ||
| Continuous Drain Current (Note 2) | ID | 3.5 | A | Note 2, steady state, TA = 25°C | 1 | ||
| Continuous Drain Current (Note 2) | ID | 2.5 | A | Note 2, steady state, TA = 85°C | 1 | ||
| Power Dissipation | PD | 1 | W | Steady state, TA = 25°C | 1 | ||
| Power Dissipation | PD | 2 | W | t ≤ 10 s, TA = 25°C | 1 | ||
| Power Dissipation (Note 2) | PD | 0.5 | W | Note 2, TA = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | tp = 10 µs, VGS = 10 V | 1 | ||
| Pulsed Drain Current | ID | 30 | A | tp = 30 µs, VGS = 5 V | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | 2 | A | 1 | |||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 54 | mJ | VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 Ω | 1 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient Thermal Resistance, Steady State (Note 1) | RθJA | 125 | °C/W | Note 1, steady state | 1 | ||
| Junction-to-Ambient Thermal Resistance, t ≤ 10 s (Note 1) | RθJA | 62.5 | °C/W | Note 1, t ≤ 10 s | 1 | ||
| Junction-to-Ambient Thermal Resistance, Steady State (Note 2) | RθJA | 248 | °C/W | Note 2, steady state | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0 V, ID = 250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VGS = 0 V, VDS = 24 V, TJ = 25°C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VGS = 0 V, VDS = 24 V, TJ = 125°C | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VGS = VDS, ID = 250 µA | 3 | |
| Drain-to-Source On Resistance | RDS(on) | 21.5 | 25 | mΩ | VGS = 10 V, ID = 7.0 A | 3 | |
| Drain-to-Source On Resistance | RDS(on) | 30 | 35 | mΩ | VGS = 4.5 V, ID = 6.0 A | 3 | |
| Forward Transconductance | gFS | 30 | S | VDS = 10 V, ID = 7.0 A | 3 | ||
| Forward Diode Voltage | VSD | 0.78 | 1 | V | VGS = 0 V, IS = 2.0 A, TJ = 25°C | 3 |
CAD (KiCad official)
- Symbol:
NTGS4141NT1G - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
ntgs4141nt1g-etched.step/ntgs4141nt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntgs4141nt1g.step/ntgs4141nt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
6c9826346aaa3293, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTGS4141NT1G
**onsemi** · MOSFETs · TSOP-6
NTGS4141NT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
| 3 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-to-source voltage limit of ±20 V. |
| 4 | Source | passive | Source terminal of the N-channel MOSFET; source (body diode) current IS is rated at 2.0 A. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage VDSS of 30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 5 | A | Steady state, TA = 25°C | 1 |
| Continuous Drain Current | ID | | | 3.6 | A | Steady state, TA = 85°C | 1 |
| Continuous Drain Current | ID | | | 7 | A | t ≤ 10 s, TA = 25°C | 1 |
| Continuous Drain Current (Note 2) | ID | | | 3.5 | A | Note 2, steady state, TA = 25°C | 1 |
| Continuous Drain Current (Note 2) | ID | | | 2.5 | A | Note 2, steady state, TA = 85°C | 1 |
| Power Dissipation | PD | | | 1 | W | Steady state, TA = 25°C | 1 |
| Power Dissipation | PD | | | 2 | W | t ≤ 10 s, TA = 25°C | 1 |
| Power Dissipation (Note 2) | PD | | | 0.5 | W | Note 2, TA = 25°C | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | tp = 10 µs, VGS = 10 V | 1 |
| Pulsed Drain Current | ID | | | 30 | A | tp = 30 µs, VGS = 5 V | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Source Current (Body Diode) | IS | | | 2 | A | | 1 |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | | | 54 | mJ | VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 Ω | 1 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |
| Junction-to-Ambient Thermal Resistance, Steady State (Note 1) | RθJA | | | 125 | °C/W | Note 1, steady state | 1 |
| Junction-to-Ambient Thermal Resistance, t ≤ 10 s (Note 1) | RθJA | | | 62.5 | °C/W | Note 1, t ≤ 10 s | 1 |
| Junction-to-Ambient Thermal Resistance, Steady State (Note 2) | RθJA | | | 248 | °C/W | Note 2, steady state | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS = 0 V, ID = 250 µA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 24 V, TJ = 25°C | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VGS = 0 V, VDS = 24 V, TJ = 125°C | 3 |
| Gate-to-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 3 |
| Gate Threshold Voltage | VGS(TH) | 1 | | 3 | V | VGS = VDS, ID = 250 µA | 3 |
| Drain-to-Source On Resistance | RDS(on) | | 21.5 | 25 | mΩ | VGS = 10 V, ID = 7.0 A | 3 |
| Drain-to-Source On Resistance | RDS(on) | | 30 | 35 | mΩ | VGS = 4.5 V, ID = 6.0 A | 3 |
| Forward Transconductance | gFS | 30 | | | S | VDS = 10 V, ID = 7.0 A | 3 |
| Forward Diode Voltage | VSD | | 0.78 | 1 | V | VGS = 0 V, IS = 2.0 A, TJ = 25°C | 3 |
## CAD (KiCad official)
- Symbol: `NTGS4141NT1G`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `ntgs4141nt1g-etched.step` / `ntgs4141nt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntgs4141nt1g.step` / `ntgs4141nt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590227017091350528) (8 pp, sha256 `6c9826346aaa3293`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntgs4141nt1g-datasheet.pdf)