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NTGS3446T1G

Public Made by Adom

by adom

onsemi MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTGS3446T1G

onsemi · MOSFETs · TSOP-6

NTGS3446T1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 DRAIN passive Drain of the N-channel MOSFET, internally common with pins 2, 5 and 6, rated for VDSS 20 V.
2 DRAIN passive Drain of the N-channel MOSFET, internally common with pins 1, 5 and 6, rated for 5.1 A continuous at TA = 25°C (Note 3 mounting).
3 GATE input Gate of the N-channel MOSFET with logic-level drive, maximum gate-to-source voltage ±12 V.
4 SOURCE passive Source of the N-channel MOSFET, with body diode source current rated up to 5.1 A.
5 DRAIN passive Drain of the N-channel MOSFET, internally common with pins 1, 2 and 6, with pulsed drain current up to 20 A (tp ≤ 10 µs).
6 DRAIN passive Drain of the N-channel MOSFET, internally common with pins 1, 2 and 5, with typical RDS(on) of 36 mΩ at VGS = 4.5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOP-6
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 20 V TC = 25°C 1
Gate-to-Source Voltage VGS -12 12 V ±12 V 1
Thermal Resistance Junction-to-Ambient (Note 1) RθJA 244 °C/W Minimum FR-4 or G-10 PCB, steady state 1
Total Power Dissipation (Note 1) Pd 0.5 W TA = 25°C, Note 1 1
Continuous Drain Current (Note 1) ID 2.5 A TA = 25°C, Note 1 1
Pulsed Drain Current (Note 1) IDM 10 A tp ≤ 10 µs, Note 1 1
Thermal Resistance Junction-to-Ambient (Note 2) RθJA 128 °C/W 2" square FR-4 board, steady state 1
Total Power Dissipation (Note 2) Pd 1 W TA = 25°C, Note 2 1
Continuous Drain Current (Note 2) ID 3.6 A TA = 25°C, Note 2 1
Pulsed Drain Current (Note 2) IDM 14 A tp ≤ 10 µs, Note 2 1
Thermal Resistance Junction-to-Ambient (Note 3) RθJA 62.5 °C/W 2" square FR-4 board, t < 5.0 seconds 1
Total Power Dissipation (Note 3) Pd 2 W TA = 25°C, Note 3 1
Continuous Drain Current (Note 3) ID 5.1 A TA = 25°C, Note 3 1
Pulsed Drain Current (Note 3) IDM 20 A tp ≤ 10 µs, Note 3 1
Source Current (Body Diode) IS 5.1 A 1
Operating and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Lead Temperature for Soldering TL 260 °C 10 seconds 1
Drain-to-Source Breakdown Voltage V(BR)DSS 20 22 Vdc VGS = 0 Vdc, ID = 0.25 mAdc 2
Zero Gate Voltage Drain Current IDSS 1 µAdc VDS = 20 Vdc, VGS = 0 Vdc 2
Zero Gate Voltage Drain Current, elevated temperature IDSS 25 µAdc VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C 2
Gate-Body Leakage Current, forward IGSS(f) 100 nAdc VGS = ±12 Vdc, VDS = 0 2
Gate-Body Leakage Current, reverse IGSS(r) -100 nAdc VGS = ±12 Vdc, VDS = 0 2
Gate Threshold Voltage VGS(th) 0.6 0.85 1.2 Vdc ID = 0.25 mA, VDS = VGS 2
Static Drain-to-Source On-Resistance RDS(on) 36 45 mΩ VGS = 4.5 Vdc, ID = 5.1 Adc 2
Static Drain-to-Source On-Resistance RDS(on) 44 55 mΩ VGS = 2.5 Vdc, ID = 4.4 Adc 2
Input Capacitance Ciss 510 750 pF VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz 2
Output Capacitance Coss 200 350 pF VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz 2
Transfer Capacitance Crss 60 100 pF VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz 2
Turn-On Delay Time td(on) 9 16 ns VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω 2
Rise Time tr 12 20 ns VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω 2
Turn-Off Delay Time td(off) 35 60 ns VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω 2
Fall Time tf 20 35 ns VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω 2
Total Gate Charge QT 8 15 nC VDS = 10 Vdc, ID = 5.1 Adc, VGS = 4.5 Vdc 2
Forward On-Voltage VSD 0.74 1.1 Vdc IS = 1.7 Adc, VGS = 0 Vdc 2
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 22 mV/°C Positive 2
Gate Threshold Voltage Temperature Coefficient VGS(th)/TJ -2.5 mV/°C Negative 2
Forward Transconductance gFS 12 mhos VDS = 10 Vdc, ID = 5.1 Adc 2
Gate Charge Qgs Qgs 2 nC VDS = 10 Vdc, ID = 5.1 Adc, VGS = 4.5 Vdc 2
Gate Charge Qgd Qgd 2 nC VDS = 10 Vdc, ID = 5.1 Adc, VGS = 4.5 Vdc 2
Forward On-Voltage, elevated temperature VSD 0.66 Vdc IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C 2
Reverse Recovery Time trr 20 ns IS = 1.7 Adc, VGS = 0 Vdc, diS/dt = 100 A/µs 2
Reverse Recovery Stored Charge QRR 0.01 µC IS = 1.7 Adc, VGS = 0 Vdc, diS/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: NTGS3446T1G
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ntgs3446t1g-etched.step / ntgs3446t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntgs3446t1g.step / ntgs3446t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 df723e34a48172f2, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF