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NTGS3441T1G

Public Made by Adom

by adom

onsemi MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorntgs3441t1gfactory-2.0.0extractor-text
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Contents

README

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NTGS3441T1G

onsemi · MOSFETs · TSOP-6

NTGS3441T1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the P-channel MOSFET, connected internally to the other drain pins; VDSS rated -20 V.
2 Drain passive Drain terminal of the P-channel MOSFET, connected internally to the other drain pins; VDSS rated -20 V.
3 Gate input Gate terminal with VGS rating of 8.0 V and threshold voltage VGS(th) of -0.45 V min to -1.50 V max at ID = -250 uA.
4 Source passive Source terminal of the P-channel MOSFET with continuous drain current up to -3.3 A (TA = 25°C, Note 3 mounting).
5 Drain passive Drain terminal of the P-channel MOSFET, connected internally to the other drain pins; pulsed drain current up to -20 A.
6 Drain passive Drain terminal of the P-channel MOSFET, connected internally to the other drain pins; RDS(on) 0.090 ohm max at VGS = -4.5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -20 Vdc VGS = 0 Vdc, ID = −10 µA 2
Zero Gate Voltage Drain Current (25°C) IDSS -1 µAdc VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C 2
Zero Gate Voltage Drain Current (70°C) IDSS -5 µAdc VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C 2
Gate-Body Leakage Current (negative) IGSS -100 nAdc VGS = −8.0 Vdc, VDS = 0 Vdc 2
Gate-Body Leakage Current (positive) IGSS 100 nAdc VGS = +8.0 Vdc, VDS = 0 Vdc 2
Gate Threshold Voltage VGS(th) -0.45 -1.05 -1.5 Vdc VDS = VGS, ID = −250 µAdc 2
Static Drain-Source On-State Resistance RDS(on) 0.069 0.09 Ω VGS = −4.5 Vdc, ID = −3.3 Adc 2
Static Drain-Source On-State Resistance RDS(on) 0.117 0.135 Ω VGS = −2.5 Vdc, ID = −2.9 Adc 2
Turn-On Delay Time td(on) 13 25 ns VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 Ω 2
Rise Time tr 23.5 45 ns VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 Ω 2
Turn-Off Delay Time td(off) 27 50 ns VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 Ω 2
Fall Time tf 24 45 ns VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 Ω 2
Total Gate Charge Qtot 6.2 14 nC VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc 2
Diode Forward On-Voltage VSD -0.88 -1.2 Vdc IS = −1.6 Adc, VGS = 0 Vdc 2
Reverse Recovery Time trr 30 60 ns IS = −1.6 Adc, dIS/dt = 100 A/µs 2
Drain-to-Source Voltage VDSS -20 V TJ = 25°C 1
Gate-to-Source Voltage - Continuous VGS 8 V TJ = 25°C 1
Total Power Dissipation (Note 1) Pd 0.5 W TA = 25°C, minimum FR-4 or G-10 PCB, steady state 1
Continuous Drain Current (Note 1) ID -1.65 A TA = 25°C, minimum FR-4 or G-10 PCB, steady state 1
Pulsed Drain Current (Note 1) IDM -10 A Tp ≤ 10 µs, TA = 25°C 1
Total Power Dissipation (Note 2) Pd 1 W TA = 25°C, 2″ square FR-4 board, steady state 1
Continuous Drain Current (Note 2) ID -2.35 A TA = 25°C, 2″ square FR-4 board, steady state 1
Pulsed Drain Current (Note 2) IDM -14 A Tp ≤ 10 µs, TA = 25°C 1
Total Power Dissipation (Note 3) Pd 2 W TA = 25°C, 2″ square FR-4 board, t ≤ 5.0 seconds 1
Continuous Drain Current (Note 3) ID -3.3 A TA = 25°C, 2″ square FR-4 board, t ≤ 5.0 seconds 1
Pulsed Drain Current (Note 3) IDM -20 A Tp ≤ 10 µs, TA = 25°C 1
Operating and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Lead Temperature for Soldering TL 260 °C 10 Seconds 1
Thermal Resistance Junction-to-Ambient (Note 1) RθJA 244 °C/W Minimum FR-4 or G-10 PCB, steady state 1
Thermal Resistance Junction-to-Ambient (Note 2) RθJA 128 °C/W 2″ square FR-4 board, steady state 1
Thermal Resistance Junction-to-Ambient (Note 3) RθJA 62.5 °C/W 2″ square FR-4 board, t ≤ 5.0 seconds 1
Forward Transconductance gFS 6.8 Mhos VDS = −10 Vdc, ID = −3.3 Adc 2
Input Capacitance Ciss 480 pF VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz 2
Output Capacitance Coss 265 pF VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 100 pF VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz 2
Gate-Source Charge Qgs 1.3 nC VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc 2
Gate-Drain Charge Qgd 2.5 nC VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc 2
Diode Forward On-Voltage VSD -0.98 Vdc IS = −3.3 Adc, VGS = 0 Vdc 2

CAD (KiCad official)

  • Symbol: NTGS3441T1G
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ntgs3441t1g-etched.step / ntgs3441t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntgs3441t1g.step / ntgs3441t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 f027e550ecb06969, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF