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NTGD4167CT1G-VB

VBsemi Elec · MOSFETs · TSOP-6

NTGD4167CT1G-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET (channel 1), with a rated gate-source voltage of ±20 V.
2 S2 passive Source of the P-channel MOSFET (channel 2), with a rated drain-source voltage of -20 V.
3 G2 input Gate of the P-channel MOSFET (channel 2), with a rated gate-source voltage of ±20 V.
4 D2 passive Drain of the P-channel MOSFET (channel 2), with a rated drain-source voltage of -20 V and continuous drain current of -3.4 A at TA = 25 °C.
5 S1 passive Source of the N-channel MOSFET (channel 1), with a rated drain-source voltage of 20 V.
6 D1 passive Drain of the N-channel MOSFET (channel 1), with a rated drain-source voltage of 20 V and continuous drain current of 5.5 A at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: NTGD4167CT1G-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ntgd4167ct1g-vb-etched.step / ntgd4167ct1g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntgd4167ct1g-vb.step / ntgd4167ct1g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 64b316acaa55a6b8, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF