component

NTGD4161PT1G-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsntgd4161pt1g-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

NTGD4161PT1G-VB

VBsemi Elec · MOSFETs · TSOP-6

NTGD4161PT1G-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of P-channel MOSFET 1, with gate-source voltage limited to ±12 V.
2 S2 passive Source of P-channel MOSFET 2 as drawn on the top-view pinout (labelled S2 next to pin 2).
3 G2 input Gate of P-channel MOSFET 2, with gate-source voltage limited to ±12 V.
4 D2 passive Drain of P-channel MOSFET 2, rated for VDS of -20 V.
5 S1 passive Source of P-channel MOSFET 1 as drawn on the top-view pinout (labelled S1 next to pin 5).
6 D1 passive Drain of P-channel MOSFET 1, rated for VDS of -20 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -4 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -3.6 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -3.1 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -12 A 1
Continuous Source-Drain Diode Current IS -1.17 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.95 A TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.4 W TC = 25 °C 1
Maximum Power Dissipation PD 0.9 W TC = 70 °C 1
Maximum Power Dissipation PD 1.14 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 0.73 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 93 110 °C/W t ≤ 5 s (notes b, d) 1
Maximum Junction-to-Ambient RthJA 150 °C/W Steady state (note d) 1
Maximum Junction-to-Foot RthJF 75 90 °C/W Steady state 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = -20 V, VGS = 0 V, TJ = 25 °C 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -8 A VDS -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.075 Ω VGS = -4.5 V, ID = -2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.1 Ω VGS = -2.5 V, ID = -1 A 2
Gate Resistance Rg 2 7 14 Ω f = 1 MHz 2
Total Gate Charge Qg 5.2 8 nC VDS = -10 V, VGS = -4.5 V, ID = -2.6 A 2
Total Gate Charge (second printed value) Qg 2.7 4 nC VDS = -10 V, VGS = -4.5 V, ID = -2.6 A 2
Turn-On Delay Time td(on) 39 59 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 25 38 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 13 20 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time (second printed set) tr 10 20 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (second printed set) td(off) 14 21 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time (second printed set) tf 7 14 ns VDD = -10 V, RL = 7.1 Ω, ID -2.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Pulse Diode Forward Current ISM 8 A 2
Continuous Source-Drain Diode Current IS 1.17 A TC = 25 °C 2
Body Diode Voltage VSD 0.85 1.2 V IS = -2.1 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = -2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 6 12 nC 2
VDS Temperature Coefficient ΔVDS/ΔTJ -17 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/ΔTJ 3.5 mV/°C 2
Forward Transconductance gfs 5 S VDS = -10 V, ID = -2.6 A 2
Input Capacitance Ciss 210 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 45 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 33 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 0.94 nC 2
Gate-Drain Charge Qgd 1.3 nC 2
Reverse Recovery Fall Time ta 9 ns 2
Reverse Recovery Rise Time tb 4 ns 2

CAD (KiCad official)

  • Symbol: NTGD4161PT1G-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ntgd4161pt1g-vb-etched.step / ntgd4161pt1g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntgd4161pt1g-vb.step / ntgd4161pt1g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 c7e8a13455cf0377, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF