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NTD6415ANLT4G-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsntd6415anlt4g-vbfactory-2.0.0extractor-text

Verified NTD6415ANLT4G-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NTD6415ANLT4G-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1ghvzqo4/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ntd6415anlt4g-vb.kicad_sym✓ ntd6415anlt4g-vb.kicad_mod✓ ntd6415anlt4g-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers ntd6415anlt4g-vb: viewers · Ray 8d ago
ntd6415anlt4g-vb-etched.glb Publish 0.1.0 · Ray 8d ago
ntd6415anlt4g-vb-etched.step ntd6415anlt4g-vb: factory component page (tier=lcsc) · Ray 8d ago
ntd6415anlt4g-vb-hero.glb ntd6415anlt4g-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
ntd6415anlt4g-vb-hero.overlay.json Publish 0.1.0 · Ray 8d ago
ntd6415anlt4g-vb.glb Publish 0.1.0 · Ray 8d ago
ntd6415anlt4g-vb.kicad_mod Publish 0.1.0 · Ray 8d ago
ntd6415anlt4g-vb.kicad_sym Publish 0.1.0 · Ray 8d ago
ntd6415anlt4g-vb.lbr Publish 0.1.0 · Ray 8d ago
ntd6415anlt4g-vb.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 8d ago

NTD6415ANLT4G-VB

VBsemi Elec · MOSFETs · TO-252

NTD6415ANLT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a gate-source voltage rating of ±20 V.
2 D passive Drain, rated for VDS 100 V and 40 A continuous (TC = 25 °C); the package tab is the drain (junction-to-case drain RthJC 1.4 °C/W).
3 S passive Source of the N-channel MOSFET, with continuous source-drain diode current IS of 40 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 40 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 23 A TC = 125 °C, TJ = 175 °C 1
Pulsed Drain Current IDM 120 A 1
Avalanche Current IAR 35 A 1
Repetitive Avalanche Energy EAR 61 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 107 W TC = 25 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W PCB mount 1
Junction-to-Case (Drain) RthJC 1.4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VSS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS= 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS= 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 75 A VDS ≥ 5 V, VGS = 10 V 2
Forward Transconductance gfs 10 S VDS = 15 V, ID = 15 A 2
Input Capacitance Ciss 2600 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 290 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 120 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 11 nC VDS = 50 V, VGS = 10 V, ID = 40 A 2
Gate-Drain Charge Qgd 9 nC VDS = 50 V, VGS = 10 V, ID = 40 A 2
Gate Resistance RG 1.7 Ω 2
Continuous Source Current IS 40 A TC = 25 °C 2
Pulsed Source Current ISM 120 A TC = 25 °C 2
Forward Voltage VSD 1 1.5 V IF = 30 A, VGS = 0 V 2
Peak Reverse Recovery Current IRM(REC) 58 A IF = 30 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: NTD6415ANLT4G-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ntd6415anlt4g-vb-etched.step / ntd6415anlt4g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd6415anlt4g-vb.step / ntd6415anlt4g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 9f173778fc85f253, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF