# NTD5407NT4G-VB

**VBsemi Elec** · MOSFETs · TO-252

NTD5407NT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of 1.5 V min to 2.5 V max at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage is rated 40 V, with pulsed drain current IDM of 200 A and continuous 55 A at TC = 25 °C (package limit 90 A). |
| 3 | S | passive | Source; continuous source-drain body diode current is 90 A at TC = 25 °C, with the diode forward voltage VSD of 0.8 V typ and 1.2 V max at IS = 22 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `NTD5407NT4G-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ntd5407nt4g-vb-etched.step` / `ntd5407nt4g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntd5407nt4g-vb.step` / `ntd5407nt4g-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ntd5407nt4g-vb-datasheet.pdf) (7 pp, sha256 `0b04557305c674eb`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntd5407nt4g-vb-datasheet.pdf)