component
NTD4858NT4G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NTD4858NT4G-VB
VBsemi Elec · MOSFETs · TO-252
NTD4858NT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is limited to ±20 V (VGS), with gate resistance Rg of 1.4 to 2.1 Ω typical/max. |
| 2 | D | passive | Drain carries continuous drain current of 100 A at TC = 25 °C with a 30 V drain-source voltage rating. |
| 3 | S | passive | Source is the reference terminal, with continuous source-drain diode current rated at 90 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 35.8 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 27 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 94.8 | mJ | 1 | |||
| Continuous Source-Drain Diode Current | IS | 90 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 3.13 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 235 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 165 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.75 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.63 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 32 | 40 | °C/W | t ≤ 10 sec | 1 | |
| Maximum Junction-to-Case Steady State | RthJC | 0.5 | 0.6 | °C/W | 1 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 90 | A | VDS 5 V, VGS = 10 V | 2 | ||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 22 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 52 | 78 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 70.2 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | 35 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | -7.5 | mV/°C | 2 | |||
| Total Gate Charge | Qg | 151 | 227 | nC | VDS = 15 V, VGS = 10 V, ID = 38.8 A | 2 | |
| Total Gate Charge | Qg | 71.5 | 103 | nC | VDS = 15 V, VGS = 4.5 V, ID = 28.8 A | 2 | |
| Gate Resistance | Rg | 1.4 | 2.1 | Ω | f = 1 MHz | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.002 | Ω | VGS = 10 V, ID = 8.8 A | 2 | ||
| Forward Transconductance | gfs | 160 | S | VDS = 15 V, ID = 38.8 A | 2 | ||
| Input Capacitance | Ciss | 5201 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 1525 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 770 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Continuous Source-Drain Diode Current | IS | 120 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 120 | A | 2 |
CAD (KiCad official)
- Symbol:
NTD4858NT4G-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ntd4858nt4g-vb-etched.step/ntd4858nt4g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntd4858nt4g-vb.step/ntd4858nt4g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
7391c4492ed65e08, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NTD4858NT4G-VB
**VBsemi Elec** · MOSFETs · TO-252
NTD4858NT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is limited to ±20 V (VGS), with gate resistance Rg of 1.4 to 2.1 Ω typical/max. |
| 2 | D | passive | Drain carries continuous drain current of 100 A at TC = 25 °C with a 30 V drain-source voltage rating. |
| 3 | S | passive | Source is the reference terminal, with continuous source-drain diode current rated at 90 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 100 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 80 | A | TC = 70 °C | 1 |
| Continuous Drain Current | ID | | | 35.8 | A | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | 27 | A | TA = 70 °C | 1 |
| Pulsed Drain Current | IDM | | | 300 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 94.8 | mJ | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 90 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 3.13 | A | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 235 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 165 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.75 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.63 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 32 | 40 | °C/W | t ≤ 10 sec | 1 |
| Maximum Junction-to-Case Steady State | RthJC | | 0.5 | 0.6 | °C/W | | 1 |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 90 | | | A | VDS 5 V, VGS = 10 V | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 22 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 52 | 78 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 70.2 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| VDS Temperature Coefficient | VDS/TJ | | 35 | | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | VGS(th)/TJ | | -7.5 | | mV/°C | | 2 |
| Total Gate Charge | Qg | | 151 | 227 | nC | VDS = 15 V, VGS = 10 V, ID = 38.8 A | 2 |
| Total Gate Charge | Qg | | 71.5 | 103 | nC | VDS = 15 V, VGS = 4.5 V, ID = 28.8 A | 2 |
| Gate Resistance | Rg | | 1.4 | 2.1 | Ω | f = 1 MHz | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.002 | | Ω | VGS = 10 V, ID = 8.8 A | 2 |
| Forward Transconductance | gfs | | 160 | | S | VDS = 15 V, ID = 38.8 A | 2 |
| Input Capacitance | Ciss | | 5201 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 1525 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 770 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Continuous Source-Drain Diode Current | IS | | | 120 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 120 | A | | 2 |
## CAD (KiCad official)
- Symbol: `NTD4858NT4G-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ntd4858nt4g-vb-etched.step` / `ntd4858nt4g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntd4858nt4g-vb.step` / `ntd4858nt4g-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ntd4858nt4g-vb-datasheet.pdf) (7 pp, sha256 `7391c4492ed65e08`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ntd4858nt4g-vb-datasheet.pdf)