# NTD4809N-1G-VB

**VBsemi Elec** · MOSFETs · TO-251

NTD4809N-1G-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V maximum and a gate threshold voltage of 1.2 V min to 3.0 V max at ID = 250 µA. |
| 2 | D | passive | Drain terminal, with a drain-source voltage rating of 30 V and a continuous drain current of 50 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, with a continuous source-drain body diode current of 15 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `NTD4809N-1G-VB`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `ntd4809n-1g-vb-etched.step` / `ntd4809n-1g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ntd4809n-1g-vb.step` / `ntd4809n-1g-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ntd4809n-1g-vb-datasheet.pdf) (8 pp, sha256 `e26d3fec33977b38`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ntd4809n-1g-vb-datasheet.pdf)