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NTD4805NT4G

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by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTD4805NT4G

UMW · MOSFETs · TO-252

NTD4805NT4G from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 30V N-channel MOSFET; gate-to-source voltage is rated ±20 V (VGS).
2 D passive DRAIN terminal of the MOSFET; drain-to-source voltage is rated 30 V (VDSS), and the datasheet lists TAB as Drain.
3 S passive SOURCE terminal of the MOSFET; the body-diode source current is rated 55 A (IS) per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V TJ=25°C 1
Gate-to-Source Voltage VGS -20 20 V TJ=25°C 1
Continuous Drain Current (RθJA) Note 1 ID 17.4 A TA=25°C, Steady State (Note 1) 1
Continuous Drain Current (RθJA) Note 1 ID 13.5 A TA=85°C, Steady State (Note 1) 1
Power Dissipation (RθJA) Note 1 PD 2.65 W TA=25°C, Steady State (Note 1) 1
Continuous Drain Current (RθJA) Note 2 ID 12.7 A TA=25°C, Steady State (Note 2) 1
Continuous Drain Current (RθJA) Note 2 ID 9.8 A TA=85°C, Steady State (Note 2) 1
Power Dissipation (RθJA) Note 2 PD 1.41 W TA=25°C, Steady State (Note 2) 1
Continuous Drain Current (RθJC) Note 1 ID 95 A TC=25°C 2
Continuous Drain Current (RθJC) Note 1 ID 73 A TC=85°C 2
Power Dissipation (RθJC) Note 1 PD 79 W TC=25°C 2
Pulsed Drain Current IDM 175 A tp=10μs 2
Current Limited by Package IDmaxPkg 45 A 2
Operating Junction and Storage Temperature TJ,TSTG -55 175 °C 2
Source Current (Body Diode) IS 55 A 2
Source Current (Body Diode) Pulsed ISM 175 A tp=20μs 2
Drain to Source dv/dt dv/dt 6 V/ns 2
Single Pulse Drain-to-Source Avalanche Energy EAS 288 mJ VDD=24 V, VGS=10V, L=1mH, IL(pk)=24A, RG=25Ω 2
Lead Temperature for Soldering Purposes TL 260 °C 1/8” from case for 10 s 2
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VGS=0V, VDS=24V, TJ=25°C 3
Zero Gate Voltage Drain Current IDSS 10 µA VGS=0V, VDS=24V, TJ=125°C 3
Gate-to-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) 1.5 2.5 V VDS=VGS, ID=250µA 3
Drain-to-Source On Resistance RDS(ON) 5 mΩ VGS=10 to 11.5V, ID=30A 3
Drain-to-Source On Resistance RDS(ON) 7.4 mΩ VGS=4.5V 3
Junction-to-Case (Drain) RθJC 1.9 °C/W 2
Junction-to-TAB (Drain) RθJC-TAB 3.5 °C/W 2
Junction-to-Ambient Steady State (Note 1) RθJA 56.6 °C/W Steady State (Note 1) 2
Junction-to-Ambient Steady State (Note 2) RθJA 106.6 °C/W Steady State (Note 2) 2

CAD (KiCad official)

  • Symbol: NTD4805NT4G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ntd4805nt4g-etched.step / ntd4805nt4g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd4805nt4g.step / ntd4805nt4g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 83979dd6bb1548b1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF