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NTD4804NT4G

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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTD4804NT4G

UMW · MOSFETs · TO-252

NTD4804NT4G from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 30 V N-channel MOSFET, with a gate-to-source voltage rating of ±20 V (VGS).
2 D passive DRAIN terminal of the 30 V N-channel MOSFET, with a drain-to-source voltage rating of 30 V (VDSS).
3 S passive SOURCE terminal of the 30 V N-channel MOSFET; the body diode source current rating is 78 A (IS).

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250µA 3
Zero Gate Voltage Drain Current (TJ=25°C) IDSS 1 µA VGS=0V, VDS=24V, TJ=25°C 3
Zero Gate Voltage Drain Current (TJ=125°C) IDSS 10 µA VGS=0V, VDS=24V, TJ=125°C 3
Gate-to-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) 1.5 V VDS=VGS, ID=250µA 3
Drain-to-Source On Resistance RDS(ON) 4 mΩ VGS=10V 1
Drain-to-Source On Resistance RDS(ON) 5.5 mΩ VGS=4.5V 1
Drain-to-Source Voltage VDSS 30 V TJ=25°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (RθJA, Note 1) ID 19.6 A TA=25°C, steady state, Note 1 1
Continuous Drain Current (RθJA, Note 1) ID 15.2 A TA=85°C, steady state, Note 1 1
Power Dissipation (RθJA, Note 1) PD 2.66 W TA=25°C, steady state, Note 1 1
Continuous Drain Current (RθJA, Note 2) ID 14.5 A TA=25°C, steady state, Note 2 1
Continuous Drain Current (RθJA, Note 2) ID 11 A TA=85°C, steady state, Note 2 1
Power Dissipation (RθJA, Note 2) PD 1.43 W TA=25°C, steady state, Note 2 1
Continuous Drain Current (RθJC, Note 1) ID 124 A TC=25°C, Note 1 2
Continuous Drain Current (RθJC, Note 1) ID 96 A TC=85°C, Note 1 2
Power Dissipation (RθJC, Note 1) PD 107 W TC=25°C, Note 1 2
Pulsed Drain Current IDM 230 A tp=10µs 2
Current Limited by Package IDmaxPkg 45 A 2
Operating Junction and Storage Temperature TJ,TSTG -55 175 °C 2
Source Current (Body Diode) IS 78 A TA=25°C 2
Drain to Source dv/dt dv/dt 6 V/ns 2
Single Pulse Drain-to-Source Avalanche Energy EAS 450 mJ VDD=24V, VGS=10V, L=1mH, IL(pk)=30A, RG=25Ω 2
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case, 10 s 2
Junction-to-Case (Drain) Thermal Resistance RθJC 1.4 °C/W 2
Junction-to-TAB (Drain) Thermal Resistance RθJC-TAB 3.5 °C/W 2
Junction-to-Ambient Thermal Resistance, Steady State RθJA 56.4 °C/W Note 1: FR4, 1 in² pad, 1 oz Cu 2
Junction-to-Ambient Thermal Resistance, Steady State RθJA 105 °C/W Note 2: FR4, minimum recommended pad 2

CAD (KiCad official)

  • Symbol: NTD4804NT4G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ntd4804nt4g-etched.step / ntd4804nt4g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd4804nt4g.step / ntd4804nt4g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 61e7a2468ec7b707, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF