NTD32N06LT4G-VB

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  "slug": "ntd32n06lt4g-vb",
  "title": "NTD32N06LT4G-VB",
  "brief": "VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "NTD32N06LT4G-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602907898410246144",
    "parts": {
      "symbol": "ntd32n06lt4g-vb.kicad_sym",
      "footprint": "ntd32n06lt4g-vb.kicad_mod",
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      "model_3d_step": "ntd32n06lt4g-vb.step",
      "lbr": "ntd32n06lt4g-vb.lbr"
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    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated gate control terminal of the N-channel MOSFET. Absolute maximum VGS = ±20 V; gate threshold voltage VGS(th) = 1.0-3.0 V (typ 2.0 V)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. Center lead of the TO-252 package; electrically connected to the exposed tab (heat slug). Rated VDS = 60 V, ID = 45 A continuous at TC = 25 °C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. N-channel MOSFET source terminal. Continuous source current (body-diode conduction) IS = 23 A; body-diode VF = 1.0 V typ, 1.5 V max at IF = 15 A."
      },
      {
        "number": "4",
        "name": "D",
        "type": "passive",
        "description": "Drain tab (thermal pad). Exposed metal tab electrically connected to the drain; used as the primary heat-dissipation path. Solder to the recommended drain pad on the PCB for thermal performance."
      }
    ],
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        "pages": null,
        "sha256": "118e31128a224f5b",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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      "footprint": "viewers/footprint.html"
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    "models_3d": [
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        "file": "ntd32n06lt4g-vb-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "3e1e61e81af3e6633c8d39a65f628c5d35c0efa49d3dfa36d5e612e7dba32fdd",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
    }
  },
  "variants": [
    {
      "mpn": "NTD32N06LT4G-VB",
      "kind": "packaging"
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  "discovery_pitch": "NTD32N06LT4G-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
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  "updated_at": "2026-09-25T03:20:11.646Z"
}