component
NTD25P03LG-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTD25P03LG-HXY
HXY MOSFET · MOSFETs · TO-252-2L
NTD25P03LG-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, and the device operates with gate voltages as low as 4.5 V (VGS(th) -1.0 to -2.5 V). |
| 2 | D | passive | Drain, connected to the exposed tab (the middle lead is trimmed on the 2L package); drain-source voltage rating is -30 V and continuous drain current is -20 A at TC=25℃. |
| 3 | S | passive | Source; P-channel MOSFET source terminal, with RDS(ON) below 42 mΩ at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 38 | 42 | mΩ | VGS=-10V , ID=-15A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 48 | 58 | mΩ | VGS=-4.5V , ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V , VDS=0V | 2 | |
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -20 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -15 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 29 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 75 | ℃/W | Junction-ambient, note 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4.32 | ℃/W | Junction-Case, note 1 | 1 |
CAD (KiCad official)
- Symbol:
NTD25P03LG-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
ntd25p03lg-hxy-etched.step/ntd25p03lg-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntd25p03lg-hxy.step/ntd25p03lg-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
ccc658bc998536da, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).