component

NTD20P06L-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorntd20p06l-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers ntd20p06l-hxy: viewers · Ray 12d ago
ntd20p06l-hxy-etched.glb Publish 0.1.0 · Ray 12d ago
ntd20p06l-hxy-etched.step ntd20p06l-hxy: factory component page (tier=lcsc) · Ray 12d ago
ntd20p06l-hxy-hero.glb ntd20p06l-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
ntd20p06l-hxy-hero.overlay.json Publish 0.1.0 · Ray 12d ago
ntd20p06l-hxy.glb Publish 0.1.0 · Ray 12d ago
ntd20p06l-hxy.kicad_mod Publish 0.1.0 · Ray 12d ago
ntd20p06l-hxy.kicad_sym Publish 0.1.0 · Ray 12d ago
ntd20p06l-hxy.lbr Publish 0.1.0 · Ray 12d ago
ntd20p06l-hxy.step Publish 0.1.0 · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago

NTD20P06L-HXY

HXY MOSFET · MOSFETs · TO-252-2L

NTD20P06L-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET with VGS limited to ±20 V and threshold -1.0 to -2.5 V, with RDS(ON) specified at VGS=-10 V and -4.5 V.
2 D passive Drain, connected to the exposed tab; VDS rated -60 V and continuous drain current -10 A at TC=25℃.
3 S passive Source; the body diode carries up to -9.5 A continuous source current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 125 140 mΩ VGS=-10V , ID=-8A 2
Static Drain-Source On-Resistance RDS(ON) 168 210 mΩ VGS=-4.5V , ID=-6A 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V , VGS=0V , TJ=150℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS -9.5 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM -24 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Drain-Source Voltage VDS -60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ -10 A VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -8.3 A VGS @ -10V 1
Pulsed Drain Current IDM -26 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 29.8 mJ VDD=-25V,VGS=-10V,L=0.1mH,IAS=-15A 1
Avalanche Current IAS -24.4 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 31.3 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1 inch2 FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△T -0.049 V/℃ Reference to 25℃ , ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 5.42 mV/℃ 2
Forward Transconductance gfs 5.8 S VDS=-5V , ID=-5A 2
Total Gate Charge (-4.5V) Qg 5.85 nC VDS=-20V , VGS =-4.5V , ID=-5A 2
Gate-Source Charge Qgs 2.9 nC VDS=-20V , VGS =-4.5V , ID=-5A 2
Gate-Drain Charge Qgd 1.8 nC VDS=-20V , VGS =-4.5V , ID=-5A 2
Turn-On Delay Time Td(on) 10 ns VDD=-12V , VGS=-10V , RG=3.3, ID=-5A 2
Rise Time Tr 17 ns VDD=-12V , VGS=-10V , RG=3.3, ID=-5A 2
Turn-Off Delay Time Td(off) 22 ns VDD=-12V , VGS=-10V , RG=3.3, ID=-5A 2
Fall Time Tf 21 ns VDD=-12V , VGS=-10V , RG=3.3, ID=-5A 2
Input Capacitance Ciss 715 pF VDS=-15V , VGS=0V , F=1MHz 2
Output Capacitance Coss 51 pF VDS=-15V , VGS=0V , F=1MHz 2
Reverse Transfer Capacitance Crss 34 pF VDS=-15V , VGS=0V , F=1MHz 2
Reverse Recovery Time trr 10.2 nS IF=-8A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 5.4 nC IF=-8A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: NTD20P06L-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ntd20p06l-hxy-etched.step / ntd20p06l-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd20p06l-hxy.step / ntd20p06l-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 c67a10dcdc7e1105, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF