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NTD18N06L-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NTD18N06L-HXY

HXY MOSFET · MOSFETs · TO-252-2L

NTD18N06L-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGS is rated ±20 V and the gate threshold VGS(th) is 1.2 V min, 1.7 V typ, 2.5 V max at ID = 250µA.
2 D passive Drain terminal; VDS is rated 60 V and continuous drain current ID is 20 A at TC=25℃ with VGS at 10V.
3 S passive Source terminal; continuous source current IS is 20 A at TC=25°C with body diode forward voltage VSD of 1.2 V max.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 20 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 10 A VGS @ 10V 1
Pulsed Drain Current IDM 80 A 1
Single Pulse Avalanche Energy EAS 38 mJ 1
Total Power Dissipation PD@TC=25℃ 34.7 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA TJ=25°C, VDS = 60V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 100 μA TJ=100°C, VDS = 60V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) 1.2 1.7 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 25 32 mΩ VGS = 10V, ID = 10A 2
Drain-Source on-Resistance RDS(on) 31.5 40 mΩ VGS = 4.5V, ID = 5A 2
Diode Forward Voltage VSD 1.2 V IS = 10A, VGS = 0V 2
Continuous Source Current IS 20 A TC=25°C 2
Forward Transconductance gfs 15.5 S VDS = 5V, ID = 10A 2
Input Capacitance Ciss 1355 pF VDS = 30V, VGS =0V, f =1MHz 2
Output Capacitance Coss 60 pF 2
Reverse Transfer Capacitance Crss 49 pF 2
Gate Resistance RG 1.2 Ω f =1MHz 2
Total Gate Charge Qg 22 nC VGS = 10V, VDD = 30V, ID= 10A 2
Gate-Source Charge Qgs 4.2 nC 2
Gate-Drain Charge Qgd 6.9 nC 2
Turn-on Delay Time td(on) 6.4 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Rise Time tr 15.3 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Turn-off Delay Time td(off) 25 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Fall Time tf 7.6 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Body Diode Reverse Recovery Time trr 26 ns IF=10A, dlF/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 45 nC 2

CAD (KiCad official)

  • Symbol: NTD18N06L-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ntd18n06l-hxy-etched.step / ntd18n06l-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd18n06l-hxy.step / ntd18n06l-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 cbce9cb3965e4194, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF