component
NTB095N65S3HF
Public Made by Adomby adom
onsemi MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTB095N65S3HF
onsemi · MOSFETs · D2PAK
NTB095N65S3HF from onsemi, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±30 V (DC and AC) and the threshold VGS(th) is 3.0 V min to 5.0 V max at ID = 0.86 mA. |
| 2 | D | passive | Drain (center lead, trimmed short in the drawing and connected to the exposed tab); VDSS is 650 V and continuous ID is 36 A at TC = 25°C. |
| 3 | S | passive | Source; the body diode conducts source-to-drain current up to IS = 36 A continuous and 90 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | D2PAK |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 1 mA, TJ = 25C | 3 | ||
| Drain to Source Breakdown Voltage | BVDSS | 700 | V | VGS = 0 V, ID = 1 mA, TJ = 150C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 650 V, VGS = 0 V | 3 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30 V, VDS = 0 V | 3 | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VGS = VDS, ID = 0.86 mA | 3 | |
| Static Drain to Source On Resistance | RDS(on) | 80 | 95 | mΩ | VGS = 10 V, ID = 18 A | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 1.3 | V | VGS = 0 V, ISD = 18 A | 3 | ||
| Maximum Continuous Source to Drain Diode Forward Current | IS | 36 | A | 3 | |||
| Maximum Pulsed Source to Drain Diode Forward Current | ISM | 90 | A | 3 | |||
| Drain to Source Voltage | VDSS | 650 | V | TC = 25°C | 2 | ||
| Gate to Source Voltage DC | VGSS | -30 | 30 | V | DC | 2 | |
| Gate to Source Voltage AC | VGSS | -30 | 30 | V | AC (f > 1 Hz) | 2 | |
| Drain Current Continuous | ID | 36 | A | TC = 25°C | 2 | ||
| Drain Current Continuous | ID | 22.8 | A | TC = 100°C | 2 | ||
| Drain Current Pulsed | IDM | 90 | A | Note 1 | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 440 | mJ | IAS = 4.6 A, RG = 25, starting TJ = 25°C | 2 | ||
| Avalanche Current | IAS | 4.6 | A | Note 2 | 2 | ||
| Repetitive Avalanche Energy | EAR | 2.72 | mJ | Note 1 | 2 | ||
| MOSFET dv/dt | dv/dt | 100 | V/ns | 2 | |||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 3 | 2 | ||
| Power Dissipation | PD | 272 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8″ from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.46 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | Note 4: 1 in2 2-oz copper pad on FR-4 | 2 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.63 | V/°C | ID = 15 mA, Referenced to 25C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 97 | µA | VDS = 520 V, TC = 125C | 3 | ||
| Forward Transconductance | gFS | 17 | S | VDS = 20 V, ID = 18 A | 3 | ||
| Input Capacitance | Ciss | 2930 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Output Capacitance | Coss | 61 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Effective Output Capacitance | Coss(eff.) | 569 | pF | VDS = 0 V to 400 V, VGS = 0 V | 3 | ||
| Energy Related Output Capacitance | Coss(er.) | 110 | pF | VDS = 0 V to 400 V, VGS = 0 V | 3 | ||
| Total Gate Charge at 10V | Qg(tot) | 66 | nC | VDS = 400 V, ID = 18 A, VGS = 10 V | 3 | ||
| Gate to Source Gate Charge | Qgs | 21 | nC | VDS = 400 V, ID = 18 A, VGS = 10 V | 3 | ||
| Gate to Drain Miller Charge | Qgd | 25 | nC | VDS = 400 V, ID = 18 A, VGS = 10 V | 3 | ||
| Equivalent Series Resistance | ESR | 2.4 | Ω | f = 1 MHz | 3 | ||
| Turn-On Delay Time | td(on) | 28 | ns | VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 4.7 | 3 | ||
| Turn-On Rise Time | tr | 28 | ns | VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 4.7 | 3 | ||
| Turn-Off Delay Time | td(off) | 72 | ns | VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 4.7 | 3 | ||
| Turn-Off Fall Time | tf | 24 | ns | VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 4.7 | 3 | ||
| Reverse Recovery Time | trr | 106 | ns | VDD = 400 V, ISD = 18 A, dIF/dt = 100 A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 414 | nC | VDD = 400 V, ISD = 18 A, dIF/dt = 100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
NTB095N65S3HF - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
ntb095n65s3hf-etched.step/ntb095n65s3hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntb095n65s3hf.step/ntb095n65s3hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
f8e58018842acc13, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).