component
NSVMUN5132T1G
Public Made by Adomby adom
onsemi Digital Transistors, SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNSVMUN5132T1G
onsemi · Digital Transistors · SC-70-3
NSVMUN5132T1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base (INPUT) of the pre-biased PNP BRT; the input-forward voltage is rated at 30 Vdc maximum and the input-reverse voltage at 10 Vdc maximum. |
| 2 | EMITTER | power_in | Emitter, labeled GROUND, is the common reference for the device; absolute maximum ratings are stated in the Maximum Ratings table (page 1). |
| 3 | COLLECTOR | output | Collector (OUTPUT) of the PNP transistor; limits are VCEO 50 Vdc, VCBO 50 Vdc and continuous collector current 100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | 1 | |||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 100 | mAdc | 1 | |||
| Input Forward Voltage | VIN(fwd) | 30 | Vdc | 1 | |||
| Input Reverse Voltage | VIN(rev) | 10 | Vdc | 1 | |||
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | VCB = 50 V, IE = 0 | 4 | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | VCE = 50 V, IB = 0 | 4 | ||
| Emitter-Base Cutoff Current | IEBO | 1.5 | mAdc | VEB = 6.0 V, IC = 0 | 4 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | Vdc | IC = 10 A, IE = 0 | 4 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | IC = 2.0 mA, IB = 0 | 4 | ||
| DC Current Gain | hFE | 15 | 27 | IC = 5.0 mA, VCE = 10 V | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | IC = 10 mA, IB = 1.0 mA | 4 | ||
| Input Voltage (off) | Vi(off) | 1.2 | 0.5 | Vdc | VCE = 5.0 V, IC = 100 A | 4 | |
| Input Voltage (on) | Vi(on) | 3 | 2.4 | Vdc | VCE = 0.3 V, IC = 20 mA | 4 | |
| Output Voltage (on) | VOL | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | 4 | ||
| Output Voltage (off) | VOH | 4.9 | Vdc | VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k | 4 | ||
| Input Resistor R1 | R1 | 3.3 | 4.7 | 6.1 | k | 4 | |
| Resistor Ratio R1/R2 | R1/R2 | 0.8 | 1 | 1.2 | 4 | ||
| Total Device Dissipation (SC-70/SOT-323, minimum pad) | PD | 202 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 3 | ||
| Total Device Dissipation (SC-70/SOT-323, 1.0 x 1.0 inch pad) | PD | 310 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) | 3 | ||
| Derate above 25°C (minimum pad) | 1.6 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 3 | |||
| Derate above 25°C (1.0 x 1.0 inch pad) | 2.5 | mW/°C | FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) | 3 | |||
| Thermal Resistance, Junction to Ambient (minimum pad) | RJA | 618 | °C/W | FR-4 @ Minimum Pad (Note 1) | 3 | ||
| Thermal Resistance, Junction to Ambient (1.0 x 1.0 inch pad) | RJA | 403 | °C/W | FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) | 3 | ||
| Thermal Resistance, Junction to Lead (minimum pad) | RJL | 280 | °C/W | FR-4 @ Minimum Pad (Note 1) | 3 | ||
| Thermal Resistance, Junction to Lead (1.0 x 1.0 inch pad) | RJL | 332 | °C/W | FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) | 3 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 3 |
CAD (KiCad official)
- Symbol:
NSVMUN5132T1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70-3 (KiCad packages3D, STEP)
- 3D model files:
nsvmun5132t1g-etched.step/nsvmun5132t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsvmun5132t1g.step/nsvmun5132t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
232c684f7b65a892, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).