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NSVMMBTA05LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVMMBTA05LT1G

onsemi · Bipolar Transistors - BJT · SOT-23

NSVMMBTA05LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN driver transistor, per Style 6 pin assignment on the SOT-23 package outline.
2 EMITTER passive Emitter terminal of the NPN driver transistor, per Style 6 pin assignment on the SOT-23 package outline.
3 COLLECTOR passive Collector terminal of the NPN driver transistor, per Style 6 pin assignment on the SOT-23 package outline.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 60 Vdc IC = 1.0 mAdc, IB = 0 (MMBTA05L) 2
Emitter-Base Breakdown Voltage V(BR)EBO 4 Vdc IE = 100 Adc, IC = 0 2
Collector Cutoff Current ICES 0.1 Adc VCE = 60 Vdc, IB = 0 2
DC Current Gain hFE 100 IC = 10 mAdc, VCE = 1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Base-Emitter On Voltage VBE(on) 1.2 Vdc IC = 100 mAdc, VCE = 1.0 Vdc 2
Current-Gain Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 2.0 V, f = 100 MHz 2
Collector-Emitter Voltage VCEO 60 Vdc MMBTA05L 1
Collector-Base Voltage VCBO 60 Vdc MMBTA05L 1
Emitter-Base Voltage VEBO 4 Vdc 1
Collector Current - Continuous IC 500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: NSVMMBTA05LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbta05lt1g-etched.step / nsvmmbta05lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbta05lt1g.step / nsvmmbta05lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 451b95b3a0419e9e, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF