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NSVMMBT6429LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVMMBT6429LT1G

onsemi · Bipolar (BJT) · SOT-23

NSVMMBT6429LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN amplifier transistor; the datasheet gives no separate pin-level limit, and the device ratings apply (VCEO 45 Vdc, VCBO 55 Vdc, VEBO 6.0 Vdc, IC 200 mAdc continuous for the 6429 type).
2 EMITTER passive Emitter terminal of the NPN amplifier transistor; the datasheet gives no separate pin-level limit, and the device ratings apply (VCEO 45 Vdc, VCBO 55 Vdc, VEBO 6.0 Vdc, IC 200 mAdc continuous for the 6429 type).
3 COLLECTOR passive Collector terminal of the NPN amplifier transistor; the datasheet gives no separate pin-level limit, and the device ratings apply (VCEO 45 Vdc, VCBO 55 Vdc, VEBO 6.0 Vdc, IC 200 mAdc continuous for the 6429 type).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 45 Vdc MMBT6429LT1G / NSVMMBT6429LT1G column 1
Collector-Base Voltage VCBO 55 Vdc MMBT6429LT1G / NSVMMBT6429LT1G column 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 200 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 board (Note 1), TA = 25°C 1
Derate above 25°C (FR-5 Board) PD 1.8 mW/°C FR-5 board, derate above 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RθJA 556 °C/W FR-5 board 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Derate above 25°C (Alumina Substrate) PD 2.4 mW/°C Alumina substrate, derate above 25°C 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RθJA 417 °C/W Alumina substrate 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO 45 Vdc IC = 1.0 mAdc, IB = 0 (MMBT6429 / NSVMMBT6429) 2
Collector-Base Breakdown Voltage V(BR)CBO 55 Vdc IC = 0.1 mAdc, IE = 0 (MMBT6429 / NSVMMBT6429) 2
Collector Cutoff Current ICES 0.1 Adc VCE = 30 Vdc 2
Collector Cutoff Current ICBO 0.01 Adc VCB = 30 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 0.01 Adc VEB = 5.0 Vdc, IC = 0 2
DC Current Gain hFE 500 IC = 0.01 mAdc, VCE = 5.0 Vdc (MMBT6429 / NSVMMBT6429) 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 Vdc IC = 10 mAdc, IB = 0.5 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 Vdc IC = 100 mAdc, IB = 5.0 mAdc 2
Base-Emitter On Voltage VBE(on) 0.56 0.66 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc 2
Current-Gain - Bandwidth Product fT 100 700 MHz IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 3 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 8 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2

CAD (KiCad official)

  • Symbol: NSVMMBT6429LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt6429lt1g-etched.step / nsvmmbt6429lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt6429lt1g.step / nsvmmbt6429lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 c422b83d218b7a26, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF