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NSVMMBT589LT1G-HXY

Public Made by Adom

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HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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NSVMMBT589LT1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

NSVMMBT589LT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; Emitter-Base voltage limit is -5 V (VEBO) and V(BR)EBO is -5 V min at IE=-100µA.
2 E passive Emitter of the PNP transistor; the pin is on the same side of the package as the base.
3 C passive Collector of the PNP transistor, rated for VCEO -30 V, VCBO -50 V and IC -1 A maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V IC=-100μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -30 V IC=-10mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100μA,IC=0 2
DC current gain hFE1 100 VCE=-2V,IC=-1mA 2
DC current gain hFE2 100 300 VCE=-2V,IC=-500mA 2
DC current gain hFE3 80 VCE=-2V,IC=-1A 2
DC current gain hFE4 40 VCE=-2V,IC=-2A 2
Transition frequency fT 100 MHz VCE=-5V, IC=-100mA, f=100MHz 2
Collector-base cut-off current ICBO -0.1 μA VCB=-30V,IE=0 2
Collector-emitter cut-off current ICES -0.1 μA VCES=-30V 2
Emitter cut-off current IEBO -0.1 μA VEB=-4V,IC=0 2
Collector-emitter saturation voltage VCE(sat)1 -0.25 V IC= -500mA, IB=-50mA 2
Collector-emitter saturation voltage VCE(sat)2 -0.3 V IC= -1A, IB=-100mA 2
Collector-emitter saturation voltage VCE(sat)3 -0.65 V IC= -2A, IB=-200mA 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC= -1A, IB=-100mA 2
Base-emitter turn-on voltage VBE(on) -1.1 V VCE=-2V, IC=-1A 2
Collector output capacitance Cob 15 pF f=1MHz 2

CAD (KiCad official)

  • Symbol: NSVMMBT589LT1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt589lt1g-hxy-etched.step / nsvmmbt589lt1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt589lt1g-hxy.step / nsvmmbt589lt1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 46e7cc7e3f5b9e01, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF