component

NSVMMBT5401WT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnsvmmbt5401wt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
nsvmmbt5401wt1g / README.md
History Download
Ray Publish 0.1.0 a95999c 17d ago

NSVMMBT5401WT1G

onsemi · Bipolar (BJT) · SC-70-3

NSVMMBT5401WT1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet's emitter-base voltage rating is VEBO −5.0 Vdc maximum.
2 EMITTER passive Emitter terminal of the PNP transistor, with the emitter-base voltage limited to −5.0 Vdc in the maximum ratings.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for a collector-emitter voltage of −150 Vdc, collector-base voltage of −160 Vdc, and continuous collector current of −500 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Breakdown Voltage V(BR)CEO -150 Vdc IC = −1.0 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO -160 Vdc IC = −100 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −10 Adc, IC = 0 2
Collector−Base Cutoff Current ICBO -50 nAdc VCB = −120 Vdc, IE = 0 2
Collector−Base Cutoff Current ICBO -50 Adc VCB = −120 Vdc, IE = 0, TA = 100°C 2
DC Current Gain hFE 50 − IC = −1.0 mAdc, VCE = −5.0 Vdc 2
DC Current Gain hFE 60 240 − IC = −10 mAdc, VCE = −5.0 Vdc 2
Collector−Emitter Saturation Voltage VCE(sat) -0.2 Vdc IC = −10 mAdc, IB = −1.0 mAdc 2
Collector−Emitter Saturation Voltage VCE(sat) -0.5 Vdc IC = −50 mAdc, IB = −5.0 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) -1 Vdc IC = −10 mAdc, IB = −1.0 mAdc 2
Current−Gain, Bandwidth Product fT 100 300 MHz IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 6 pF VCB = −10 Vdc, IE = 0, f = 1.0 MHz 2
Small Signal Current Gain hfe 40 200 − IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz 2
Noise Figure NF 8 dB IC = −200 Adc, VCE = −5.0 Vdc, RS = 10, f = 1.0 kHz 2
Collector−Emitter Voltage VCEO -150 Vdc 1
Collector−Base Voltage VCBO -160 Vdc 1
Emitter−Base Voltage VEBO -5 Vdc 1
Collector Current − Continuous IC -500 mAdc 1
Total Device Dissipation PD 400 mW TA = 25°C, FR-5 board (Note 2) 1
Thermal Resistance, Junction−to−Ambient RJA 312 °C/W FR-5 board (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Derate Above 25°C (total device dissipation) 3.2 mW/°C Above 25°C, FR-5 board 1

CAD (KiCad official)

  • Symbol: NSVMMBT5401WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70-3 (KiCad packages3D, STEP)
  • 3D model files: nsvmmbt5401wt1g-etched.step / nsvmmbt5401wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvmmbt5401wt1g.step / nsvmmbt5401wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 cbcc92ab4133c85c, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF