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NSVD4001DR2G

onsemi · LED Drivers · SOIC-8

NSVD4001DR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Vin power_in Positive input voltage to the device; continuous input voltage is rated at 30 V maximum with a non-repetitive peak of 60 V.
2 Boost output This pin may be used to drive an external transistor as described in the App Note AND8198/D.
3 Rext passive An external resistor between Rext and Vin pins sets different current levels for different application needs.
4 GND power_in Ground.
5 Iout output The LEDs are connected from these pins to ground; output current is rated at 500 mA maximum with a 28 V maximum output voltage.
6 Iout output The LEDs are connected from these pins to ground; output current is rated at 500 mA maximum with a 28 V maximum output voltage.
7 Iout output The LEDs are connected from these pins to ground; output current is rated at 500 mA maximum with a 28 V maximum output voltage.
8 Iout output The LEDs are connected from these pins to ground; output current is rated at 500 mA maximum with a 28 V maximum output voltage.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Nixie Tube Driver/LED Driver
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output Current1 Iout1 305 325 345 mA Vin = 12 V, Rext = 2.0 , VLEDs = 10 V 2
Output Current2 Iout2 95 105 115 mA Vin = 30 V, Rext = 7.0 , VLEDs = 24 V 2
Bias Current IBias 5 8 mA Vin = 12 V, Rext = Open, VLEDs = 10 V 2
Voltage Overhead Vover 1.4 V 2
Continuous Input Voltage Vin 30 V 2
Non-repetitive Peak Input Voltage Vp 60 V t 1.0 ms 2
Output Current Iout 500 mA For Vdrop 2.2 V (Note 1) 2
Output Voltage Vout 28 V 2
Human Body Model ESD HBM ESD 1000 V 2
Operating Ambient Temperature TA -40 125 °C 2
Maximum Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Total Power Dissipation PD 1.13 W Note 2 2
Derating above 25°C 9 mW/°C Derating above 25°C (Figure 3) 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Note 2 2
Thermal Resistance, Junction-to-Lead RJL 77 °C/W Note 2 2

CAD (KiCad official)

  • Symbol: NSVD4001DR2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: nsvd4001dr2g-etched.step / nsvd4001dr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvd4001dr2g.step / nsvd4001dr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 c9881fd57f6a7ee9, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF