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NSVBCW68GLT1G-HXY
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HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NSVBCW68GLT1G-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
NSVBCW68GLT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drive terminal of the PNP transistor, rated at VEBO -5 V with continuous collector current up to -1 A (IB=-100 mA in the saturation tests). |
| 2 | E | passive | Emitter; main current terminal of the PNP transistor, with VCEO of -60 V and VEBO of -5 V. |
| 3 | C | passive | Collector; main current terminal of the PNP transistor, rated VCBO -80 V, VCEO -60 V, IC -1 A continuous and -2 A peak. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cutoff current | ICBO | 0.1 | μA | IE=0 (VCB value garbled in source text) | 1 | ||
| Emitter cutoff current | IEBO | 0.1 | μA | VCB=… (value garbled in source text), IC=0 | 1 | ||
| DC current gain | hFE2 | 100 | 300 | VCE=9V, IC=500mA (garbled in source text) | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | 0.3 | V | IC=500mA, IB=50mA (garbled in source text) | 1 |
CAD (KiCad official)
- Symbol:
NSVBCW68GLT1G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nsvbcw68glt1g-hxy-etched.step/nsvbcw68glt1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsvbcw68glt1g-hxy.step/nsvbcw68glt1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
6c1cd75664b7ff54, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NSVBCW68GLT1G-HXY
**HXY MOSFET** · Bipolar (BJT) · SOT-23
NSVBCW68GLT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drive terminal of the PNP transistor, rated at VEBO -5 V with continuous collector current up to -1 A (IB=-100 mA in the saturation tests). |
| 2 | E | passive | Emitter; main current terminal of the PNP transistor, with VCEO of -60 V and VEBO of -5 V. |
| 3 | C | passive | Collector; main current terminal of the PNP transistor, rated VCBO -80 V, VCEO -60 V, IC -1 A continuous and -2 A peak. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cutoff current | ICBO | | | 0.1 | μA | IE=0 (VCB value garbled in source text) | 1 |
| Emitter cutoff current | IEBO | | | 0.1 | μA | VCB=… (value garbled in source text), IC=0 | 1 |
| DC current gain | hFE2 | 100 | | 300 | | VCE=9V, IC=500mA (garbled in source text) | 1 |
| Collector-emitter saturation voltage | VCE(sat)1 | | | 0.3 | V | IC=500mA, IB=50mA (garbled in source text) | 1 |
## CAD (KiCad official)
- Symbol: `NSVBCW68GLT1G-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nsvbcw68glt1g-hxy-etched.step` / `nsvbcw68glt1g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nsvbcw68glt1g-hxy.step` / `nsvbcw68glt1g-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604450242863915008) (4 pp, sha256 `6c1cd75664b7ff54`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nsvbcw68glt1g-hxy-datasheet.pdf)