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NSVBCH807-25LT1G

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onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVBCH807-25LT1G

onsemi · Bipolar Transistors - BJT · SOT-23

NSVBCH807-25LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor (SOT-23 Style 6, pin 1); drives the device with VEBO limit of -5.0 V.
2 EMITTER passive Emitter terminal of the PNP transistor (SOT-23 Style 6, pin 2); emitter-base voltage limited to -5.0 V.
3 COLLECTOR passive Collector terminal of the PNP transistor (SOT-23 Style 6, pin 3); VCEO -45 V, VCBO -50 V, continuous IC -500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mAdc 1
Collector Current - Peak ICM -800 mA 1
Junction and Storage Temperature TJ, Tstg -55 175 °C 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C (Note 1) 1
Derating above 25°C FR-5 Board PD 1.3 mW/°C Derate above 25°C 1
Thermal Resistance, Junction-to-Ambient RθJA 400 °C/W Note 1 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Note 1) 1
Derating above 25°C Alumina Substrate PD 1.8 mW/°C Derate above 25°C 1
Thermal Resistance, Junction-to-Ambient RθJA 330 °C/W Note 2 1
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC = -10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -50 V VEB = 0, IC = -10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 A 2
Collector Cutoff Current ICBO -100 nA VCB = -20 V 2
Collector Cutoff Current ICBO -5 A VCB = -20 V, TJ = 150°C 2
DC Current Gain hFE 160 400 IC = -100 mA, VCE = -1.0 V 2
DC Current Gain hFE 40 IC = -500 mA, VCE = -1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC = -500 mA, IB = -50 mA 2
Base-Emitter On Voltage VBE(on) -1.2 V IC = -500 mA, VCE = -1.0 V 2
Current-Gain Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 10 pF VCB = -10 V, f = 1.0 MHz 2

CAD (KiCad official)

  • Symbol: NSVBCH807-25LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsvbch807-25lt1g-etched.step / nsvbch807-25lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvbch807-25lt1g.step / nsvbch807-25lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 e98e1dd82938ba45, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF