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NSVBC856BM3T5G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVBC856BM3T5G

onsemi · Bipolar Transistors - BJT · SOT-723

NSVBC856BM3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; Emitter-Base voltage limited to -5.0 V (VEBO) and collector current rated -100 mA continuous.
2 EMITTER passive Emitter of the PNP transistor; Emitter-Base breakdown voltage V(BR)EBO is -5.0 V minimum.
3 COLLECTOR passive Collector of the PNP transistor; Collector-Emitter voltage VCEO -65 V, Collector-Base voltage VCBO -80 V, continuous current -100 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-723
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -65 V 1
Collector-Base Voltage VCBO -80 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mA 1
Total Device Dissipation FR-5 Board PD 265 mW TA = 25°C, FR-5 board (Note 1) 1
Thermal Resistance, Junction to Ambient (FR-5) RJA 470 °C/W Note 1 (FR-5) 1
Total Device Dissipation Alumina Substrate PD 640 mW TA = 25°C, Alumina substrate (Note 2) 1
Thermal Resistance, Junction to Ambient (Alumina) RJA 195 °C/W Note 2 (Alumina) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO -65 V IC = -10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -80 V IC = -10 A, VEB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -80 V IC = -10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 A 2
Collector Cutoff Current ICBO -15 nA VCB = -30 V 2
Collector Cutoff Current ICBO -4 A VCB = -30 V, TA = 150°C 2
DC Current Gain hFE 220 290 475 IC = -2.0 mA, VCE = -5.0 V 2
DC Current Gain hFE 150 IC = -10 A, VCE = -5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Voltage VBE(on) -0.6 -0.75 mV IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter Voltage VBE(on) -0.82 mV IC = -10 mA, VCE = -5.0 V 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2

CAD (KiCad official)

  • Symbol: NSVBC856BM3T5G
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: nsvbc856bm3t5g-etched.step / nsvbc856bm3t5g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvbc856bm3t5g.step / nsvbc856bm3t5g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 2f29459d27cef429, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF