component

NSVBC847BDW1T2G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSVBC847BDW1T2G

onsemi · Bipolar (BJT) · SOT-363

NSVBC847BDW1T2G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER 2 passive Emitter of NPN transistor 2; the datasheet gives BC847 limits of 45 V VCEO, 50 V VCBO, 6.0 V VEBO and 100 mA continuous collector current.
2 BASE 2 passive Base of NPN transistor 2; the datasheet gives BC847 limits of 45 V VCEO, 50 V VCBO, 6.0 V VEBO and 100 mA continuous collector current.
3 COLLECTOR 1 passive Collector of NPN transistor 1; the datasheet gives BC847 limits of 45 V VCEO, 50 V VCBO, 6.0 V VEBO and 100 mA continuous collector current.
4 EMITTER 1 passive Emitter of NPN transistor 1; the datasheet gives BC847 limits of 45 V VCEO, 50 V VCBO, 6.0 V VEBO and 100 mA continuous collector current.
5 BASE 1 passive Base of NPN transistor 1; the datasheet gives BC847 limits of 45 V VCEO, 50 V VCBO, 6.0 V VEBO and 100 mA continuous collector current.
6 COLLECTOR 2 passive Collector of NPN transistor 2; the datasheet gives BC847 limits of 45 V VCEO, 50 V VCBO, 6.0 V VEBO and 100 mA continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Breakdown Voltage (BC847) V(BR)CEO 45 V IC = 10 mA 2
Collector−Emitter Breakdown Voltage (BC847) V(BR)CES 50 V IC = 10 µA, VEB = 0 2
Collector−Base Breakdown Voltage (BC847) V(BR)CBO 50 V IC = 10 µA 2
Emitter−Base Breakdown Voltage (BC847) V(BR)EBO 6 V IE = 1.0 µA 2
Collector Cutoff Current ICBO 15 nA VCB = 30 V 2
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 2
DC Current Gain (BC847B) hFE 200 290 450 IC = 2.0 mA, VCE = 5.0 V 2
DC Current Gain (BC847B) hFE 150 IC = 10 µA, VCE = 5.0 V 2
Collector−Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector−Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base−Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 2
Base−Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 2
Current−Gain − Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2
Collector−Emitter Voltage (BC847) VCEO 45 V 1
Collector−Base Voltage (BC847) VCBO 50 V 1
Emitter−Base Voltage (BC847) VEBO 6 V 1
Collector Current − Continuous IC 100 mAdc 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation Per Device PD 380 mW FR-5 Board (Note 1), TA = 25°C 1
Total Device Dissipation Per Device PD 250 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction to Ambient RθJA 328 °C/W 1

CAD (KiCad official)

  • Symbol: NSVBC847BDW1T2G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: nsvbc847bdw1t2g-etched.step / nsvbc847bdw1t2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsvbc847bdw1t2g.step / nsvbc847bdw1t2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 2a275663a6518a14, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF