component
NSVBC818-40LT1G-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| nsvbc818-40lt1g-hxy-etched.glb | 17d ago |
| nsvbc818-40lt1g-hxy-etched.step | 17d ago |
| nsvbc818-40lt1g-hxy-hero.glb | 17d ago |
| nsvbc818-40lt1g-hxy-hero.overlay.json | 17d ago |
| nsvbc818-40lt1g-hxy.glb | 17d ago |
| nsvbc818-40lt1g-hxy.kicad_mod | 17d ago |
| nsvbc818-40lt1g-hxy.kicad_sym | 17d ago |
| nsvbc818-40lt1g-hxy.lbr | 17d ago |
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| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
NSVBC818-40LT1G-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
NSVBC818-40LT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5 V, with ICBO/IEBO leakage of 0.1 µA max in the stated test conditions. |
| 2 | E | passive | Emitter of the NPN transistor; VEBO max 5 V and the emitter carries the collector current up to the 500 mA maximum. |
| 3 | C | passive | Collector of the NPN transistor; VCBO 50 V, VCEO 45 V and IC 500 mA maximum, with 300 mW package power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | 45 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25°C | 1 | ||
| Collector current | IC | 500 | mA | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 300 | mW | Ta=25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RΘJA | 417 | ℃/W | 1 | |||
| Collector-base breakdown voltage | VCBO | 50 | V | IC= 10μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | VCEO | 45 | V | IC= 10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | VEBO | 5 | V | IE= 1μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB= 45 V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB= 4V, IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 250 | 600 | VCE= 1V, IC= 100mA | 2 | ||
| DC current gain hFE(2) | hFE(2) | 40 | VCE= 1V, IC= 500mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.7 | V | IC= 500mA, IB= 50mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC= 500mA, IB= 50mA | 2 | ||
| Base-emitter voltage | VBE | 1.2 | V | VCE= 1 V, IC= 500mA | 2 | ||
| Collector capacitance | Cob | 10 | pF | VCB=10V, f=1MHz | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE= 5 V, IC= 10mA, f=100MHz | 2 |
CAD (KiCad official)
- Symbol:
NSVBC818-40LT1G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nsvbc818-40lt1g-hxy-etched.step/nsvbc818-40lt1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsvbc818-40lt1g-hxy.step/nsvbc818-40lt1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
3af42a879e2e565f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).