component
NSVBAS70LT1G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NSVBAS70LT1G
onsemi · Schottky Barrier Diodes (SBD) · SOT-23
NSVBAS70LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the single Schottky barrier diode (70 V reverse voltage, 70 mA forward current). |
| 2 | NC | unconnected | No connection per CASE 318 Style 8 pin assignment. |
| 3 | CATHODE | passive | Cathode of the single Schottky barrier diode (70 V reverse voltage, 70 mA forward current). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | V(BR)R | 70 | V | IR = 10 μA | 2 | ||
| Total Capacitance | CT | 2 | pF | VR = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Leakage | IR | 0.1 | μA | VR = 50 V | 2 | ||
| Reverse Leakage | IR | 10 | μA | VR = 70 V | 2 | ||
| Forward Voltage | VF | 410 | mV | IF = 1.0 mA | 2 | ||
| Forward Voltage | VF | 750 | mV | IF = 10 mA | 2 | ||
| Forward Voltage | VF | 1000 | mV | IF = 15 mA | 2 | ||
| Forward Current | IF | 70 | mA | TJ = 150°C | 1 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | 100 | mA | t ≤ 1.0 s, TJ = 150°C | 1 | ||
| Reverse Voltage | VR | 70 | V | TJ = 150°C | 1 | ||
| Forward Power Dissipation | PF | 225 | mW | TA = 25°C | 1 | ||
| Power Derating | 1.8 | mW/°C | Derate above 25°C | 1 | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 508 | °C/W | Note 1: FR-4 @ minimum pad | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 311 | °C/W | Note 2: FR-4 @ 1.0 x 1.0 in pad | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
NSVBAS70LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nsvbas70lt1g-etched.step/nsvbas70lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsvbas70lt1g.step/nsvbas70lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (4 pp, sha256
b9dbdeb32c28c9ee, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NSVBAS70LT1G
**onsemi** · Schottky Barrier Diodes (SBD) · SOT-23
NSVBAS70LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the single Schottky barrier diode (70 V reverse voltage, 70 mA forward current). |
| 2 | NC | unconnected | No connection per CASE 318 Style 8 pin assignment. |
| 3 | CATHODE | passive | Cathode of the single Schottky barrier diode (70 V reverse voltage, 70 mA forward current). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | V(BR)R | 70 | | | V | IR = 10 μA | 2 |
| Total Capacitance | CT | | | 2 | pF | VR = 0 V, f = 1.0 MHz | 2 |
| Reverse Leakage | IR | | | 0.1 | μA | VR = 50 V | 2 |
| Reverse Leakage | IR | | | 10 | μA | VR = 70 V | 2 |
| Forward Voltage | VF | | | 410 | mV | IF = 1.0 mA | 2 |
| Forward Voltage | VF | | | 750 | mV | IF = 10 mA | 2 |
| Forward Voltage | VF | | | 1000 | mV | IF = 15 mA | 2 |
| Forward Current | IF | | | 70 | mA | TJ = 150°C | 1 |
| Non-Repetitive Peak Forward Surge Current | IFSM | | | 100 | mA | t ≤ 1.0 s, TJ = 150°C | 1 |
| Reverse Voltage | VR | | | 70 | V | TJ = 150°C | 1 |
| Forward Power Dissipation | PF | | | 225 | mW | TA = 25°C | 1 |
| Power Derating | | | | 1.8 | mW/°C | Derate above 25°C | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 508 | °C/W | Note 1: FR-4 @ minimum pad | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 311 | °C/W | Note 2: FR-4 @ 1.0 x 1.0 in pad | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `NSVBAS70LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nsvbas70lt1g-etched.step` / `nsvbas70lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nsvbas70lt1g.step` / `nsvbas70lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/nsvbas70lt1-d.pdf) (4 pp, sha256 `b9dbdeb32c28c9ee`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nsvbas70lt1g-datasheet.pdf)