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Ray Publish 0.1.0 a7c67b8 17d ago

NSV40200LT1G

onsemi · Bipolar (BJT) · SOT-23

NSV40200LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet rates peak base current at IBM = -300 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage rating is VEBO = -7.0 Vdc.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated for continuous collector current IC = -2.0 A (peak ICM = -4.0 A) with VCEO = -40 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -40 Vdc 2
Collector-Base Voltage VCBO -40 Vdc 2
Emitter-Base Voltage VEBO -7 Vdc 2
Collector Current - Continuous IC -2 A 2
Collector Current - Peak ICM -4 A 2
Base Current - Peak IBM -300 mA 2
Total Device Dissipation PD 460 mW TA = 25°C; FR-4 @ 100 mm2, 1 oz. copper traces (Note 1) 2
Thermal Resistance, Junction-to-Ambient RJA 270 °C/W FR-4 @ 100 mm2, 1 oz. copper traces (Note 1) 2
Total Device Dissipation PD 540 mW TA = 25°C; FR-4 @ 500 mm2, 1 oz. copper traces (Note 2) 2
Thermal Resistance, Junction-to-Ambient RJA 230 °C/W FR-4 @ 500 mm2, 1 oz. copper traces (Note 2) 2
Total Device Dissipation (Single Pulse) PDsingle 710 mW Single Pulse < 10 sec (Note 3) 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2
Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vdc IC = −10 mAdc, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO -40 Vdc IC = −0.1 mAdc, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO -7 Vdc IE = −0.1 mAdc, IC = 0 3
Collector Cutoff Current ICBO -0.1 Adc VCB = −40 Vdc, IE = 0 3
Emitter Cutoff Current IEBO -0.1 Adc VEB = −7.0 Vdc 3
DC Current Gain hFE 250 IC = −10 mA, VCE = −2.0 V 3
DC Current Gain hFE 220 300 IC = −500 mA, VCE = −2.0 V 3
DC Current Gain hFE 180 IC = −1.0 A, VCE = −2.0 V 3
DC Current Gain hFE 150 IC = −2.0 A, VCE = −2.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) -0.01 -0.017 V IC = −0.1 A, IB = −0.010 A (Note 5) 3
Collector-Emitter Saturation Voltage VCE(sat) -0.08 -0.095 V IC = −1.0 A, IB = −0.100 A 3
Collector-Emitter Saturation Voltage VCE(sat) -0.135 -0.17 V IC = −1.0 A, IB = −0.010 A 3
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = −1.0 A, IB = −0.01 A 3
Base-Emitter Turn-on Voltage VBE(on) -0.9 V IC = −1.0 A, VCE = −2.0 V 3
Cutoff Frequency fT 100 MHz IC = −100 mA, VCE = −5.0 V, f = 100 MHz 3
Input Capacitance Cibo 325 pF VEB = 0.5 V, f = 1.0 MHz 3
Output Capacitance Cobo 62 pF VCB = 3.0 V, f = 1.0 MHz 3
Delay Time td 60 ns VCC = −30 V, IC = 750 mA, IB1 = 15 mA 3
Rise Time tr 120 ns VCC = −30 V, IC = 750 mA, IB1 = 15 mA 3
Storage Time ts 400 ns VCC = −30 V, IC = 750 mA, IB1 = 15 mA 3
Fall Time tf 130 ns VCC = −30 V, IC = 750 mA, IB1 = 15 mA 3

CAD (KiCad official)

  • Symbol: NSV40200LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nsv40200lt1g-etched.step / nsv40200lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsv40200lt1g.step / nsv40200lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 0e48885e81cc270b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF