component
NSV20200LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNSV20200LT1G
onsemi · Bipolar (BJT) · SOT-23
NSV20200LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; the datasheet specifies saturation drive at IB = −0.010 A to −0.200 A and a base-emitter saturation voltage of −0.900 V max at IC = −1.0 A, IB = −0.01 A. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; the emitter-base voltage rating is VEBO = −7.0 Vdc and the emitter cutoff current is specified at VEB = −7.0 Vdc. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; ratings are VCEO = −20 Vdc, VCBO = −20 Vdc, continuous collector current IC = −2.0 A and peak collector current ICM = −4.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -20 | Vdc | 2 | |||
| Collector-Base Voltage | VCBO | -20 | Vdc | 2 | |||
| Emitter-Base Voltage | VEBO | -7 | Vdc | 2 | |||
| Collector Current - Continuous | IC | -2 | A | 2 | |||
| Collector Current - Peak | ICM | -4 | A | 2 | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Total Device Dissipation | PD | 460 | mW | TA = 25°C (Note 1) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 270 | °C/W | Note 1 | 2 | ||
| Total Device Dissipation | PD | 540 | mW | TA = 25°C (Note 2) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 230 | °C/W | Note 2 | 2 | ||
| Total Device Dissipation (Single Pulse < 10 sec.) | PDsingle | 710 | mW | Single Pulse < 10 sec. (Note 3) | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -20 | Vdc | IC = −10 mAdc, IB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -20 | Vdc | IC = −0.1 mAdc, IE = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -7 | Vdc | IE = −0.1 mAdc, IC = 0 | 3 | ||
| Collector Cutoff Current | ICBO | -0.1 | Adc | VCB = −20 Vdc, IE = 0 | 3 | ||
| Emitter Cutoff Current | IEBO | -0.1 | Adc | VEB = −7.0 Vdc | 3 | ||
| DC Current Gain | hFE | 250 | IC = −10 mA, VCE = −2.0 V (Note 4) | 3 | |||
| DC Current Gain | hFE | 180 | IC = −1.0 A, VCE = −2.0 V (Note 4) | 3 | |||
| DC Current Gain | hFE | 150 | IC = −2.0 A, VCE = −2.0 V (Note 4) | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.008 | -0.013 | V | IC = −0.1 A, IB = −0.010 A (Note 5) | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.065 | -0.09 | V | IC = −1.0 A, IB = −0.100 A (Note 4) | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.1 | -0.12 | V | IC = −1.0 A, IB = −0.010 A (Note 4) | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.13 | -0.18 | V | IC = −2.0 A, IB = −0.200 A (Note 4) | 3 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC = −1.0 A, IB = −0.01 A (Note 4) | 3 | ||
| Base-Emitter Turn-on Voltage | VBE(on) | -0.9 | V | IC = −1.0 A, VCE = −2.0 V (Note 4) | 3 | ||
| Cutoff Frequency | fT | 100 | MHz | IC = −100 mA, VCE = −5.0 V, f = 100 MHz | 3 | ||
| Input Capacitance | Cibo | 330 | pF | VEB = 0.5 V, f = 1.0 MHz | 3 | ||
| Output Capacitance | Cobo | 100 | pF | VCB = 3.0 V, f = 1.0 MHz | 3 | ||
| Delay Time | td | 60 | ns | VCC = −15 V, IC = 750 mA, IB1 = 15 mA | 3 | ||
| Rise Time | tr | 120 | ns | VCC = −15 V, IC = 750 mA, IB1 = 15 mA | 3 | ||
| Storage Time | ts | 300 | ns | VCC = −15 V, IC = 750 mA, IB1 = 15 mA | 3 | ||
| Fall Time | tf | 130 | ns | VCC = −15 V, IC = 750 mA, IB1 = 15 mA | 3 |
CAD (KiCad official)
- Symbol:
NSV20200LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nsv20200lt1g-etched.step/nsv20200lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nsv20200lt1g.step/nsv20200lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
3134a81c56bb031a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).