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NST65010MW6T1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NST65010MW6T1G
onsemi · Bipolar (BJT) · SOT-363
NST65010MW6T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the second PNP transistor in the matched pair; the device's maximum emitter-base voltage VEBO is −5.0 V. |
| 2 | BASE 2 | passive | Base of the second PNP transistor in the matched pair, which sets its collector current in the datasheet test conditions (for example VBE(on) of −600 to −750 mV at IC = −2.0 mA, VCE = −5.0 V). |
| 3 | COLLECTOR 1 | passive | Collector of the first PNP transistor in the matched pair; the maximum collector-emitter voltage VCEO is −65 V and continuous collector current IC is −100 mA. |
| 4 | EMITTER 1 | passive | Emitter of the first PNP transistor in the matched pair; the device's maximum emitter-base voltage VEBO is −5.0 V. |
| 5 | BASE 1 | passive | Base of the first PNP transistor in the matched pair, which sets its collector current in the datasheet test conditions (for example VBE(on) of −600 to −750 mV at IC = −2.0 mA, VCE = −5.0 V). |
| 6 | COLLECTOR 2 | passive | Collector of the second PNP transistor in the matched pair; the maximum collector-emitter voltage VCEO is −65 V and continuous collector current IC is −100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Voltage | VCEO | -65 | V | 1 | |||
| Collector−Base Voltage | VCBO | -80 | V | 1 | |||
| Emitter−Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current − Continuous | IC | -100 | mAdc | 1 | |||
| Total Device Dissipation Per Device, FR-5 Board (Note 1), TA = 25°C | PD | 380 | mW | FR-5 board (Note 1), TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient | RJA | 328 | °C/W | 1 | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -65 | V | IC = −10 mA | 2 | ||
| Collector−Emitter Breakdown Voltage | V(BR)CES | -80 | V | IC = −10 A, VEB = 0 | 2 | ||
| Collector−Base Breakdown Voltage | V(BR)CBO | -80 | V | IC = −10 A | 2 | ||
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = −1.0 A | 2 | ||
| Collector Cutoff Current | ICBO | -15 | nA | VCB = −30 V | 2 | ||
| Collector Cutoff Current | ICBO | -5 | A | VCB = −30 V, TA = 150°C | 2 | ||
| DC Current Gain | hFE | 220 | 290 | 475 | IC = −2.0 mA, VCE = −5.0 V | 2 | |
| DC Current Gain Matching Ratio | hFE(1)/hFE(2) | 0.9 | 1 | 1.1 | IC = −2.0 mA, VCE = −5.0 V (Note 2) | 2 | |
| Collector−Emitter Saturation Voltage | VCE(sat) | -300 | mV | IC = −10 mA, IB = −0.5 mA | 2 | ||
| Collector−Emitter Saturation Voltage | VCE(sat) | -650 | mV | IC = −100 mA, IB = −5.0 mA | 2 | ||
| Base−Emitter On Voltage | VBE(on) | -600 | -750 | mV | IC = −2.0 mA, VCE = −5.0 V | 2 | |
| Base−Emitter On Voltage | VBE(on) | -820 | mV | IC = −10 mA, VCE = −5.0 V | 2 | ||
| Base−Emitter Voltage Match | VBE(1) − VBE(2) | -1 | -2 | mV | IC = −2.0 mA, VCE = −5.0 V (Note 3) | 2 | |
| Current−Gain − Bandwidth Product | fT | 100 | MHz | IC = −10 mA, VCE = −5 Vdc, f = 100 MHz | 2 | ||
| Output Capacitance | Cob | 4.5 | pF | VCB = −10 V, f = 1.0 MHz | 2 | ||
| Noise Figure | NF | 10 | dB | IC = −0.2 mA, VCE = −5 Vdc, RS = 2 k, f = 1 kHz, BW = 200Hz | 2 |
CAD (KiCad official)
- Symbol:
NST65010MW6T1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
nst65010mw6t1g-etched.step/nst65010mw6t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nst65010mw6t1g.step/nst65010mw6t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
99717da93c4974cf, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NST65010MW6T1G
**onsemi** · Bipolar (BJT) · SOT-363
NST65010MW6T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the second PNP transistor in the matched pair; the device's maximum emitter-base voltage VEBO is −5.0 V. |
| 2 | BASE 2 | passive | Base of the second PNP transistor in the matched pair, which sets its collector current in the datasheet test conditions (for example VBE(on) of −600 to −750 mV at IC = −2.0 mA, VCE = −5.0 V). |
| 3 | COLLECTOR 1 | passive | Collector of the first PNP transistor in the matched pair; the maximum collector-emitter voltage VCEO is −65 V and continuous collector current IC is −100 mA. |
| 4 | EMITTER 1 | passive | Emitter of the first PNP transistor in the matched pair; the device's maximum emitter-base voltage VEBO is −5.0 V. |
| 5 | BASE 1 | passive | Base of the first PNP transistor in the matched pair, which sets its collector current in the datasheet test conditions (for example VBE(on) of −600 to −750 mV at IC = −2.0 mA, VCE = −5.0 V). |
| 6 | COLLECTOR 2 | passive | Collector of the second PNP transistor in the matched pair; the maximum collector-emitter voltage VCEO is −65 V and continuous collector current IC is −100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Voltage | VCEO | -65 | | | V | | 1 |
| Collector−Base Voltage | VCBO | -80 | | | V | | 1 |
| Emitter−Base Voltage | VEBO | -5 | | | V | | 1 |
| Collector Current − Continuous | IC | -100 | | | mAdc | | 1 |
| Total Device Dissipation Per Device, FR-5 Board (Note 1), TA = 25°C | PD | | | 380 | mW | FR-5 board (Note 1), TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient | RJA | | | 328 | °C/W | | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -65 | | | V | IC = −10 mA | 2 |
| Collector−Emitter Breakdown Voltage | V(BR)CES | -80 | | | V | IC = −10 A, VEB = 0 | 2 |
| Collector−Base Breakdown Voltage | V(BR)CBO | -80 | | | V | IC = −10 A | 2 |
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE = −1.0 A | 2 |
| Collector Cutoff Current | ICBO | | | -15 | nA | VCB = −30 V | 2 |
| Collector Cutoff Current | ICBO | | | -5 | A | VCB = −30 V, TA = 150°C | 2 |
| DC Current Gain | hFE | 220 | 290 | 475 | | IC = −2.0 mA, VCE = −5.0 V | 2 |
| DC Current Gain Matching Ratio | hFE(1)/hFE(2) | 0.9 | 1 | 1.1 | | IC = −2.0 mA, VCE = −5.0 V (Note 2) | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) | | | -300 | mV | IC = −10 mA, IB = −0.5 mA | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) | | | -650 | mV | IC = −100 mA, IB = −5.0 mA | 2 |
| Base−Emitter On Voltage | VBE(on) | -600 | | -750 | mV | IC = −2.0 mA, VCE = −5.0 V | 2 |
| Base−Emitter On Voltage | VBE(on) | | | -820 | mV | IC = −10 mA, VCE = −5.0 V | 2 |
| Base−Emitter Voltage Match | VBE(1) − VBE(2) | | -1 | -2 | mV | IC = −2.0 mA, VCE = −5.0 V (Note 3) | 2 |
| Current−Gain − Bandwidth Product | fT | 100 | | | MHz | IC = −10 mA, VCE = −5 Vdc, f = 100 MHz | 2 |
| Output Capacitance | Cob | | | 4.5 | pF | VCB = −10 V, f = 1.0 MHz | 2 |
| Noise Figure | NF | | | 10 | dB | IC = −0.2 mA, VCE = −5 Vdc, RS = 2 k, f = 1 kHz, BW = 200Hz | 2 |
## CAD (KiCad official)
- Symbol: `NST65010MW6T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `nst65010mw6t1g-etched.step` / `nst65010mw6t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nst65010mw6t1g.step` / `nst65010mw6t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590163812625117184) (7 pp, sha256 `99717da93c4974cf`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nst65010mw6t1g-datasheet.pdf)