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NST489AMT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NST489AMT1G

onsemi · Bipolar Transistors - BJT · TSOP-6

NST489AMT1G from onsemi, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 COLLECTOR passive Collector, tied internally with pins 2, 5 and 6; device rated VCEO 30 V and IC 2.0 A continuous (3.0 A peak).
2 COLLECTOR passive Collector, tied internally with pins 1, 5 and 6; device rated VCBO 50 V and IC 2.0 A continuous.
3 BASE input Base of the NPN transistor; VEBO maximum 5.0 V.
4 EMITTER passive Emitter of the NPN transistor (Style 6 pin 4).
5 COLLECTOR passive Collector, tied internally with pins 1, 2 and 6; VCE(sat) max 0.200 V at IC = 1.0 A, IB = 100 mA.
6 COLLECTOR passive Collector, tied internally with pins 1, 2 and 5; device rated VCEO 30 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSOP-6
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 30 V TA = 25°C 1
Collector-Base Voltage VCBO 50 V TA = 25°C 1
Emitter-Base Voltage VEBO 5 V TA = 25°C 1
Collector Current - Continuous IC 2 A TA = 25°C 1
Collector Current - Peak ICM 3 A TA = 25°C 1
Total Device Dissipation (Note 1) PD 535 mW TA = 25°C, FR-4 3.9 mm2 copper 1
Total Device Dissipation (Note 2) PD 1.18 W TA = 25°C, FR-4 645 mm2 copper 1
Total Device Dissipation Single Pulse PDsingle 1.75 W Single Pulse < 10 s, Notes 2 and 3 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 234 °C/W Note 1 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 106 °C/W Note 2 1
Thermal Resistance, Junction-to-Lead #1 (Note 1) RθJL 110 °C/W Note 1 1
Thermal Resistance, Junction-to-Lead #1 (Note 2) RθJL 50 °C/W Note 2 1
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC = 10 mA, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 50 V IC = 0.1 mA, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 0.1 mA, IC = 0 2
Collector Cutoff Current ICBO 0.1 µA VCB = 30 V, IE = 0 2
Collector-Emitter Cutoff Current ICES 0.1 µA VCES = 30 V 2
Emitter Cutoff Current IEBO 0.1 µA VEB = 4.0 V 2
DC Current Gain hFE 300 IC = 1.0 mA, VCE = 5.0 V 2
DC Current Gain hFE 300 500 900 IC = 0.5 A, VCE = 5.0 V 2
DC Current Gain hFE 200 IC = 1.0 A, VCE = 5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.2 V IC = 1.0 A, IB = 100 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.06 0.125 V IC = 0.5 A, IB = 50 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.05 0.075 V IC = 0.1 A, IB = 1.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC = 1.0 A, IB = 0.1 A 2
Base-Emitter Turn-on Voltage VBE(on) 1.1 V IC = 1.0 A, VCE = 2.0 V 2
Output Capacitance Cobo 15 pF f = 1.0 MHz 2
Cutoff Frequency fT 200 300 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 2

CAD (KiCad official)

  • Symbol: NST489AMT1G
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: nst489amt1g-etched.step / nst489amt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nst489amt1g.step / nst489amt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 6f6c24657058e60c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF