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NST3904DXV6T1G

Public Made by Adom

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onsemi Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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NST3904DXV6T1G

onsemi · Bipolar (BJT) · SOT-563

NST3904DXV6T1G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor Q2 (NPN); the device is rated VEBO 6.0 Vdc and IC 200 mAdc continuous.
2 B2 passive Base of transistor Q2; emitter-base voltage is limited to 6.0 Vdc (VEBO).
3 C1 passive Collector of transistor Q1; VCEO 40 Vdc, VCBO 60 Vdc, IC 200 mAdc continuous.
4 E1 passive Emitter of transistor Q1 (NPN); the device is rated VEBO 6.0 Vdc and IC 200 mAdc continuous.
5 B1 passive Base of transistor Q1; emitter-base voltage is limited to 6.0 Vdc (VEBO).
6 C2 passive Collector of transistor Q2; VCEO 40 Vdc, VCBO 60 Vdc, IC 200 mAdc continuous.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 40 Vdc 1
Collector-Base Voltage VCBO 60 Vdc 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 200 mAdc 1
Electrostatic Discharge HBM ESD 16000 V HBM; printed as >16000 1
Electrostatic Discharge MM ESD 2000 V MM; printed as >2000 1
Total Device Dissipation (one junction heated) PD 357 mW TA = 25°C; one junction heated; FR-4 @ minimum pad 2
Derate above 25°C (one junction heated) 2.9 mW/°C Above TA = 25°C; one junction heated; FR-4 @ minimum pad 2
Thermal Resistance Junction-to-Ambient (one junction heated) RJA 350 °C/W One junction heated; FR-4 @ minimum pad 2
Total Device Dissipation (both junctions heated) PD 500 mW TA = 25°C; both junctions heated; FR-4 @ minimum pad 2
Derate above 25°C (both junctions heated) 4 mW/°C Above TA = 25°C; both junctions heated; FR-4 @ minimum pad 2
Thermal Resistance, Junction-to-Ambient (both junctions heated) RJA 250 °C/W Both junctions heated; FR-4 @ minimum pad 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2
Collector-Emitter Breakdown Voltage V(BR)CEO 40 Vdc IC = 1.0 mAdc, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO 60 Vdc IC = 10 Adc, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 3
Base Cutoff Current IBL 50 nAdc VCE = 30 Vdc, VEB = 3.0 Vdc 3
Collector Cutoff Current ICEX 50 nAdc VCE = 30 Vdc, VEB = 3.0 Vdc 3
DC Current Gain hFE 40 IC = 0.1 mAdc, VCE = 1.0 Vdc 3
DC Current Gain hFE 70 IC = 1.0 mAdc, VCE = 1.0 Vdc 3
DC Current Gain hFE 100 300 IC = 10 mAdc, VCE = 1.0 Vdc 3
DC Current Gain hFE 60 IC = 50 mAdc, VCE = 1.0 Vdc 3
DC Current Gain hFE 30 IC = 100 mAdc, VCE = 1.0 Vdc 3
Collector-Emitter Saturation Voltage VCE(sat) 0.2 Vdc IC = 10 mAdc, IB = 1.0 mAdc 3
Collector-Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 50 mAdc, IB = 5.0 mAdc 3
Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 Vdc IC = 10 mAdc, IB = 1.0 mAdc 3
Base-Emitter Saturation Voltage VBE(sat) 0.95 Vdc IC = 50 mAdc, IB = 5.0 mAdc 3
Current-Gain - Bandwidth Product fT 300 MHz IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz 3
Output Capacitance Cobo 4 pF VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz 3
Input Capacitance Cibo 8 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 3
Input Impedance (row 1) hie 1 10 kΩ VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Input Impedance (row 2) hie 2 12 kΩ VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Voltage Feedback Ratio (row 1) hre 0.5 8 X 10−4 VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Voltage Feedback Ratio (row 2) hre 0.1 10 X 10−4 VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Small-Signal Current Gain (row 1) hfe 100 400 − VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Small-Signal Current Gain (row 2) hfe 100 400 − VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Output Admittance (row 1) hoe 1 40 mhos VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Output Admittance (row 2) hoe 3 60 mhos VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 3
Noise Figure (row 1) NF 5 dB VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 kΩ, f = 1.0 kHz 3
Noise Figure (row 2) NF 4 dB VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 kΩ, f = 1.0 kHz 3
Delay Time td 35 ns VCC = 3.0 Vdc, VBE = −0.5 Vdc 3
Rise Time tr 35 ns IC = 10 mAdc, IB1 = 1.0 mAdc 3
Storage Time ts 200 ns VCC = 3.0 Vdc, IC = 10 mAdc 3
Fall Time tf 50 ns IB1 = IB2 = 1.0 mAdc 3

CAD (KiCad official)

  • Symbol: NST3904DXV6T1G
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: nst3904dxv6t1g-etched.step / nst3904dxv6t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nst3904dxv6t1g.step / nst3904dxv6t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 ce6e9af27bd86c7e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF