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NSS30100LT1G-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSS30100LT1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

NSS30100LT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; emitter-base voltage limited to -5 V (VEBO) and base drive of -100 mA at IC=-1 A for saturation.
2 E passive Emitter of the PNP transistor, the most positive terminal when on; VEBO max -5 V.
3 C passive Collector of the PNP transistor; VCEO -30 V, VCBO -50 V, continuous collector current -1 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V IC=-100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -30 V IC=-10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100µA, IC=0 2
Collector cut-off current ICBO -0.1 µA VCB=-30V, IE=0 2
Collector-emitter cut-off current ICES -0.1 µA VCES=-30V 2
Emitter cut-off current IEBO -0.1 µA VEB=-4V, IC=0 2
DC current gain hFE1 100 VCE=-2V, IC=-1mA 2
DC current gain hFE2 100 300 VCE=-2V, IC=-500mA 2
DC current gain hFE3 80 VCE=-2V, IC=-1A 2
DC current gain hFE4 40 VCE=-2V, IC=-2A 2
Collector-emitter saturation voltage VCE(sat)1 -0.25 V IC=-500mA, IB=-50mA 2
Collector-emitter saturation voltage VCE(sat)2 -0.3 V IC=-1A, IB=-100mA 2
Collector-emitter saturation voltage VCE(sat)3 -0.65 V IC=-2A, IB=-200mA 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA 2
Base-emitter turn-on voltage VBE(on) -1.1 V VCE=-2V, IC=-1A 2
Transition frequency fT 100 MHz VCE=-5V, IC=-100mA, f=100MHz 2
Collector output capacitance Cob 15 pF f=1MHz 2
Collector-base voltage VCBO -50 V 1
Collector-emitter voltage VCEO -30 V 1
Emitter-base voltage VEBO -5 V 1
Collector current IC -1 A 1
Collector power dissipation PC 310 mW 1
Thermal resistance from junction to ambient RθJA 403 °C/W 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: NSS30100LT1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nss30100lt1g-hxy-etched.step / nss30100lt1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nss30100lt1g-hxy.step / nss30100lt1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 8e31ca4f9a57b629, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF