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NSS1C201LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NSS1C201LT1G

onsemi · Bipolar Transistors - BJT · SOT-23

NSS1C201LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet gives the emitter-base voltage limit VEBO as 7.0 Vdc and the emitter-base breakdown voltage V(BR)EBO as 7.0 Vdc minimum.
2 EMITTER passive Emitter terminal of the NPN transistor; device-level limits are a maximum emitter-base voltage VEBO of 7.0 Vdc and a continuous collector current of 2.0 A (peak 3.0 A).
3 COLLECTOR passive Collector terminal of the NPN transistor; device-level limits are a collector-emitter voltage VCEO of 100 Vdc and a collector-base voltage VCBO of 140 Vdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 100 Vdc 1
Collector-Base Voltage VCBO 140 Vdc 1
Emitter-Base Voltage VEBO 7 Vdc 1
Collector Current - Continuous IC 2 A 1
Collector Current - Peak ICM 3 A 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation (Note 1) PD 490 mW TA = 25°C, FR-4 @ 100 mm2, 1 oz. copper traces 1
Total Device Dissipation (Note 2) PD 710 mW TA = 25°C, FR-4 @ 500 mm2, 1 oz. copper traces 1
Thermal Resistance, Junction-to-Ambient (Note 1) RJA 255 °C/W FR-4 @ 100 mm2, 1 oz. copper traces 1
Thermal Resistance, Junction-to-Ambient (Note 2) RJA 176 °C/W FR-4 @ 500 mm2, 1 oz. copper traces 1
Collector-Emitter Breakdown Voltage V(BR)CEO 100 Vdc IC = 10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 140 Vdc IC = 0.1 mAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 7 Vdc IE = 0.1 mAdc, IC = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 140 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 50 nAdc VEB = 6.0 Vdc 2
DC Current Gain hFE 150 IC = 10 mA, VCE = 2.0 V 2
DC Current Gain hFE 120 IC = 500 mA, VCE = 2.0 V 2
DC Current Gain hFE 80 IC = 1.0 A, VCE = 2.0 V 2
DC Current Gain hFE 40 IC = 2.0 A, VCE = 2.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.03 V IC = 0.1 A, IB = 0.01 A 2
Collector-Emitter Saturation Voltage VCE(sat) 0.06 V IC = 0.5 A, IB = 0.05 A 2
Collector-Emitter Saturation Voltage VCE(sat) 0.09 V IC = 1.0 A, IB = 0.100 A 2
Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC = 2.0 A, IB = 0.200 A 2
Base-Emitter Saturation Voltage VBE(sat) 0.95 V IC = 1.0 A, IB = 0.100 A 2
Base-Emitter Turn-on Voltage VBE(on) 0.85 V IC = 1.0 A, VCE = 2.0 V 2
Cutoff Frequency fT 110 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 2
Input Capacitance Cibo 230 pF VEB = 2.0 V, f = 1.0 MHz 2
Output Capacitance Cobo 14 pF VCB = 10 V, f = 1.0 MHz 2

CAD (KiCad official)

  • Symbol: NSS1C201LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nss1c201lt1g-etched.step / nss1c201lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nss1c201lt1g.step / nss1c201lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 b2f1ddf42447f25b, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF