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NSI8210N1-Q1SPR

NOVOSENSE · Digital Isolators · SOP-8

NSI8210N1-Q1SPR from NOVOSENSE, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Power supply for isolator side 1; recommended supply range is 2.5V to 5.5V, with a 0.1 µF bypass capacitor between VDD1 and GND1 placed as close to the package as possible.
2 IN input Logic input to side 1; VIH minimum 2V and VIL maximum 0.8V.
3 VDD1 power_in Power supply for isolator side 1; recommended supply range is 2.5V to 5.5V, with a 0.1 µF bypass capacitor between VDD1 and GND1 placed as close to the package as possible.
4 GND1 power_in Ground reference for isolator side 1 (input side).
5 GND2 power_in Ground reference for isolator side 2 (output side).
6 OUT output Logic output from side 2; VOH is VDD-0.4V minimum at IOH=-4mA and VOL is 0.4V maximum at IOL=4mA, with absolute output voltage not to exceed 6.5V.
7 NC unconnected Not connected; no internal connection.
8 VDD2 power_in Power supply for isolator side 2; recommended supply range is 2.5V to 5.5V, with a 0.1 µF bypass capacitor between VDD2 and GND2 placed as close to the package as possible.

Key specifications

Parameter Value
Manufacturer NOVOSENSE
Package SOP-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power Supply Voltage VDD1, VDD2 2.5 5.5 V 6
Data Rate DR 0 150 Mbps 6
Ambient Temperature Ta -40 125 ℃ 6
High-level Input Voltage VIH 2 V 6
Low-level Input Voltage VIL 0.8 V 6
Power Supply Voltage VDD1, VDD2 -0.5 6.5 V 6
Maximum Input Voltage IN -0.4 V The maximum voltage must not exceed 6.5V 6
Maximum Output Voltage OUT -0.4 V The maximum voltage must not exceed 6.5V 6
Maximum Input/Output Pulse Voltage IN, OUT -0.8 V Pulse width should be less than 100ns, and the duty cycle should be less than 10% 6
Output current Io -15 15 mA 6
Maximum Surge Isolation Voltage VIOSM 6.25 kV VTEST=VIOSM×1.6 6
Operating Temperature Topr -40 125 ℃ 6
Junction Temperature Tj -40 150 ℃ 6
Storage Temperature Tstg -65 150 ℃ 6
Electrostatic discharge HBM HBM -8000 8000 V 6
Electrostatic discharge CDM CDM -2000 2000 V 6
High Level Input Voltage VIH 2 V 7
Low Level Input Voltage VIL 0.8 V 7
Low Level Output Voltage VOL 0.4 V IOL = 4mA 7
Input Pull high or low Current Ipull 8 15 uA 7
Common Mode Transient Immunity CMTI 200 250 kV/us See Figure 5.6, CL = 15pF 7
Minimum Pulse Width PW 5 ns 9
Propagation Delay tPLH (5V) tPLH 2.5 6.54 15 ns See Figure 5.5, CL = 15pF 9
Propagation Delay tPHL (5V) tPHL 2.5 8.3 15 ns See Figure 5.5, CL = 15pF 9
Pulse Width Distortion (5V) PWD 5 ns See Figure 5.5, CL = 15pF 9
Rising Time (5V) tr 5 ns See Figure 5.5, CL = 15pF 9
Falling Time (5V) tf 5 ns See Figure 5.5, CL = 15pF 9
Peak Eye Diagram Jitter (5V) tJIT(PK) 350 ps 9
Channel-to-Channel Delay Skew (5V) tSK(c2c) 2.5 ns 9
Part-to-Part Delay Skew (5V) tSK(p2p) 5 ns 9
Minimum Pulse Width PW 5 ns 10
Propagation Delay tPLH (3.3V) tPLH 2.5 8 15 ns See Figure 5.5, CL = 15pF 10
Propagation Delay tPHL (3.3V) tPHL 2.5 8.7 15 ns See Figure 5.5, CL = 15pF 10
Pulse Width Distortion (3.3V) PWD 5 ns See Figure 5.5, CL = 15pF 10
Rising Time (3.3V) tr 5 ns See Figure 5.5, CL = 15pF 10
Falling Time (3.3V) tf 5 ns See Figure 5.5, CL = 15pF 10
Peak Eye Diagram Jitter (3.3V) tJIT(PK) 350 ps 10
Channel-to-Channel Delay Skew (3.3V) tSK(c2c) 2.5 ns 10
Part-to-Part Delay Skew (3.3V) tSK(p2p) 5 ns 10
Minimum Pulse Width PW 5 ns 11
Pulse Width Distortion (2.5V) PWD 5 ns See Figure 5.5, CL = 15pF 11
Rising Time (2.5V) tr 5 ns See Figure 5.5, CL = 15pF 11
Falling Time (2.5V) tf 5 ns See Figure 5.5, CL = 15pF 11
Channel-to-Channel Delay Skew (2.5V) tSK(c2c) 2.5 ns 11
Part-to-Part Delay Skew (2.5V) tSK(p2p) 5 ns 11
Supply current VDD1 (Q0) IDD1(Q0) 0.64 0.96 mA All Input at supply for NSi8210N1 8
Supply current VDD2 (Q0) IDD2(Q0) 1.27 1.91 mA 8
Supply current VDD1 (Q1) IDD1(Q1) 1.66 2.49 mA All Input 0V for NSi8210N1 8
Supply current VDD2 (Q1) IDD2(Q1) 1.28 1.92 mA 8
Power on Reset VDDPOR 2.2 V POR threshold as during power-up 7
POR threshold Hysteresis VDD HYS 0.1 V POR threshold Hysteresis 7
Input Threshold VIT 1.6 V Input Threshold at rising edge 7
Input Threshold Hysteresis VIT_HYS 0.4 V Input Threshold Hysteresis 7
Start Up Time after POR trbs 10 usec 7
IC Junction-to-Air Thermal Resistance (SOP8) θJA 146.1 °C/W 7
Junction-to-case (top) thermal resistance (SOP8) θJC(top) 63.1 °C/W 7
Junction-to-board thermal resistance (SOP8) θJB 80 °C/W 7

CAD (KiCad official)

  • Symbol: NSI8210N1-Q1SPR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nsi8210n1-q1spr-etched.step / nsi8210n1-q1spr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsi8210n1-q1spr.step / nsi8210n1-q1spr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NOVOSENSE datasheet (32 pp, sha256 5e9c56a292e239a6, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF