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Contents

README

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NSI1306M25-DSWVR

NOVOSENSE · RF Modulators / Demodulator · SOP-8-300mil

NSI1306M25-DSWVR from NOVOSENSE, in a SOP-8-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 AVDD power_in Power supply for analog side, 3.0V to 5.5V.
2 INP input Positive analog input, ±250mV recommended for NSI1306M25.
3 INN input Negative analog input.
4 AGND power_in Analog ground reference.
5 DGND power_in Digital ground reference.
6 DOUT output Modulator data output, a single-bit data stream synchronous to CLKIN.
7 CLKIN input Modulator clock input, 5 to 21MHz.
8 DVDD power_in Power supply for digital side, 3.0V to 5.5V.

Key specifications

Parameter Value
Manufacturer NOVOSENSE
Package SOP-8-300mil
Category Radio Frequency Chip/Antenna
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Analog Side Power Supply AVDD 3 5 5.5 V 5
Digital Side Power Supply DVDD 3 3.3 5.5 V 5
Linear differential input full scale voltage (M25) VFSR -250 250 mV NSI1306M25 5
Operating common-mode input voltage (M25) VCM -0.16 0.8 V NSI1306M25 5
Operating Ambient Temperature TA -40 125 ℃ 5
Differential input voltage before clipping output (M25) VClipping -320 320 mV NSI1306M25 5
Power Supply Voltage AVDD, DVDD -0.3 6.5 V 5
Output current per Output Pin Io -10 10 mA 5
Operating Temperature TOPR -40 125 ℃ 5
Junction Temperature TJ -40 150 ℃ 5
Storage Temperature TSTG -55 150 ℃ 5
ESD HBM HBM -2000 2000 V per AEC-Q100-002-RevD 5
ESD CDM CDM -1000 1000 V per AEC-Q100-011-RevB 5
Analog Side Supply Current IAVDD 11.4 15.1 mA 8
Digital Side Supply Current IDVDD 1.78 2.5 mA 8
AVDD undervoltage detection threshold voltage AVDDUV 1.8 2.3 2.7 V AVDD falling 8
Input bias current IIB -24 -18 -12 µA INP = INN = AGND, IIB = (IIBP + IIBN) / 2 8
Common-mode transient immunity CMTI 100 150 kV/μs 8
Differential nonlinearity DNL -0.99 0.99 LSB 8
Integral nonlinearity INL -4 1 4 LSB typ printed ±1 8
Offset error EO -100 4.5 100 µV INP = INN = AGND; typ printed ±4.5 8
Offset error thermal drift TCEO -0.5 0.15 1.5 µV/℃ typ printed ±0.15 8
Gain error EG -0.2 0.005 0.2 % typ printed ±0.005% 8
Gain error thermal drift TCEG -40 20 40 ppm/℃ typ printed ±20 8
Signal to noise ratio SNR 82 86 dB fIN = 1kHz 9
Signal to noise and distortion SINAD 82 86 dB fIN = 1kHz 9
Total harmonic distortion THD -95 -85 dB fIN = 1kHz 9
Spurious-free dynamic range SFDR 83 100 dB fIN = 1kHz 9
Input current IIN 0 7 µA DGND ≤ VIN ≤ DVDD 9
Output load capacitance CLOAD 30 pF 9
Low-level output voltage VOL 0.1 V IOL = 20µA 9
Low-level output voltage VOL 0.4 V IOL = 4mA 9
CLKIN clock frequency fCLKIN 5 21 MHz 9
CLKIN clock period tCLKIN 47.6 200 ns 9
CLKIN clock high time tHIGH 20 25 120 ns 9
CLKIN clock low time tLOW 20 25 120 ns 9
DOUT rising time tr 5 ns CLOAD = 15pF 9
DOUT falling time tf 5 ns CLOAD = 15pF 9
DOUT hold time after rising edge of CLKIN tH 3.5 ns CLOAD = 15pF 9
Rising edge of CLKIN to DOUT valid delay tD 15 ns CLOAD = 15pF 9
Analog setting time tAS 0.5 ms AVDD step to 3.0 V with DVDD ≥ 3.0 V, to DOUT valid, 0.1% settling 9
Junction-to-ambient thermal resistance RθJA 86 ℃/W SOP8(300mil) 5
Junction-to-case (top) thermal resistance RθJC(top) 28 ℃/W SOP8(300mil) 6
Junction-to-board thermal resistance RθJB 42 ℃/W SOP8(300mil) 6
Junction-to-top characterization parameter ΨJT 4 ℃/W SOP8(300mil) 6
Junction-to-board characterization parameter ΨJB 42 ℃/W SOP8(300mil) 6
Common-mode overvoltage detection level VCMov 0.9 V Detection level has a typical hysteresis of 96 mV 8
Common-mode rejection ratio DC CMRRdc -106 dB INP = INN, fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max 8
Common-mode rejection ratio AC CMRRac -104 dB INP = INN, fIN = 10 kHz, VCM min ≤ VIN ≤ VCM max 8
Single-ended input resistance RIN 19 kΩ INN = AGND 8
Differential input resistance RIND 22 kΩ 8
Input capacitance (analog) CI 2 pF 8
Input bias current drift TCIIB 1 nA/℃ typ printed ±1 8
PSRR vs AVDD, DC PSRR -100 dB PSRR vs AVDD, at DC 9
PSRR vs AVDD, 10kHz ripple PSRR -90 dB PSRR vs AVDD, 100mV and 10kHz ripple 9
Input capacitance (digital) CIN 5 pF 9

CAD (KiCad official)

  • Symbol: NSI1306M25-DSWVR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-300mil (KiCad packages3D, STEP)
  • 3D model files: nsi1306m25-dswvr-etched.step / nsi1306m25-dswvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsi1306m25-dswvr.step / nsi1306m25-dswvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NOVOSENSE datasheet (26 pp, sha256 2a8af086877b20b6, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF