component

NRVTSS5100ET3G

Public Made by Adom

by adom

onsemi Schottky Barrier Diodes (SBD), SMB. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

componentdiodesnrvtss5100et3gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
nrvtss5100et3g / README.md
History Download
Ray Publish 0.1.0 5b0a9e5 11d ago

NRVTSS5100ET3G

onsemi · Schottky Barrier Diodes (SBD) · SMB

NRVTSS5100ET3G from onsemi, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer onsemi
Package SMB
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Instantaneous Forward Voltage vF 0.65 0.69 V iF = 5.0 A, TJ = 25°C 2
Instantaneous Forward Voltage vF 0.56 0.62 V iF = 5.0 A, TJ = 125°C 2
Reverse Current iR 2.6 29 A Rated dc Voltage, TJ = 25°C 2
Reverse Current iR 2.2 5 mA Rated dc Voltage, TJ = 125°C 2
Instantaneous Forward Voltage vF 0.56 V iF = 3.0 A, TJ = 25°C 2
Instantaneous Forward Voltage vF 0.5 V iF = 3.0 A, TJ = 125°C 2
Diode Capacitance Cd 54.4 pF Rated dc Voltage, TJ = 25°C, f = 1 MHz 2
Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage VRRM, VRWM, VR 100 V 2
Average Rectified Forward Current IF(AV) 5 A TL = 100°C 2
Peak Repetitive Forward Current IFRM 10 A Square Wave, 20 kHz, TL = 83°C 2
Non-Repetitive Peak Surge Current IFSM 50 A Surge applied at rated load conditions, halfwave, single phase, 60 Hz 2
Storage Temperature Range Tstg -65 175 °C 2
Operating Junction Temperature TJ -55 175 °C 2
Maximum Thermal Resistance, Junction-to-Lead (NRVTSS5100E) RθJL 13.1 °C/W Steady state, Note 1: assumes 600 mm2 1 oz. copper bond pad on FR4 board 2
Maximum Thermal Resistance, Junction-to-Ambient (NRVTSS5100E) RθJA 71.1 °C/W Steady state, Note 1: assumes 600 mm2 1 oz. copper bond pad on FR4 board 2

CAD (KiCad official)

  • Symbol: NRVTSS5100ET3G
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB (KiCad packages3D, STEP)
  • 3D model files: nrvtss5100et3g-etched.step / nrvtss5100et3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nrvtss5100et3g.step / nrvtss5100et3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 c4468a0e3e00ac82, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF