component
NRVBS540T3G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SMC. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
NRVBS540T3G
onsemi · Schottky Barrier Diodes (SBD) · SMC
NRVBS540T3G from onsemi, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMC |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 40 | V | 2 | |||
| Working Peak Reverse Voltage | VRWM | 40 | V | 2 | |||
| DC Blocking Voltage | VR | 40 | V | 2 | |||
| Average Rectified Forward Current | IF(AV) | 5 | A | At Rated VR, TC = 105°C | 2 | ||
| Peak Repetitive Forward Current | IFRM | 10 | A | At Rated VR, Square Wave, 20 KHz, TC = 80°C | 2 | ||
| Non-Repetitive Peak Surge Current | IFSM | 190 | A | Surge at rated load, halfwave, single phase, 60 Hz | 2 | ||
| Storage Temperature Range | Tstg | -65 | 150 | °C | 2 | ||
| Operating Junction Temperature | TJ | -65 | 150 | °C | Note 1 | 2 | |
| Voltage Rate of Change | dv/dt | 10000 | V/s | Rated VR | 2 | ||
| Thermal Resistance, Junction-to-Lead | RJL | 12 | °C/W | Note 2 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 111 | °C/W | Note 2: surface mounted on minimum pad size recommended | 2 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.5 | V | iF = 5.0 A, TC = 25°C; Note 3 pulse test | 2 | ||
| Maximum Instantaneous Reverse Current | iR | 0.3 | mA | Rated dc Voltage, TC = 25°C; Note 3 pulse test | 2 | ||
| Maximum Instantaneous Reverse Current | iR | 15 | mA | Rated dc Voltage, TC = 100°C; Note 3 pulse test | 2 |
CAD (KiCad official)
- Symbol:
NRVBS540T3G - Footprint:
Diode_SMD:D_SMC - 3D model: SMC (KiCad packages3D, STEP)
- 3D model files:
nrvbs540t3g-etched.step/nrvbs540t3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nrvbs540t3g.step/nrvbs540t3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
1064a599f53ed9cb, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NRVBS540T3G
**onsemi** · Schottky Barrier Diodes (SBD) · SMC
NRVBS540T3G from onsemi, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMC |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | | | 40 | V | | 2 |
| Working Peak Reverse Voltage | VRWM | | | 40 | V | | 2 |
| DC Blocking Voltage | VR | | | 40 | V | | 2 |
| Average Rectified Forward Current | IF(AV) | | | 5 | A | At Rated VR, TC = 105°C | 2 |
| Peak Repetitive Forward Current | IFRM | | | 10 | A | At Rated VR, Square Wave, 20 KHz, TC = 80°C | 2 |
| Non-Repetitive Peak Surge Current | IFSM | | | 190 | A | Surge at rated load, halfwave, single phase, 60 Hz | 2 |
| Storage Temperature Range | Tstg | -65 | | 150 | °C | | 2 |
| Operating Junction Temperature | TJ | -65 | | 150 | °C | Note 1 | 2 |
| Voltage Rate of Change | dv/dt | | | 10000 | V/s | Rated VR | 2 |
| Thermal Resistance, Junction-to-Lead | RJL | | | 12 | °C/W | Note 2 | 2 |
| Thermal Resistance, Junction-to-Ambient | RJA | | | 111 | °C/W | Note 2: surface mounted on minimum pad size recommended | 2 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.5 | V | iF = 5.0 A, TC = 25°C; Note 3 pulse test | 2 |
| Maximum Instantaneous Reverse Current | iR | | | 0.3 | mA | Rated dc Voltage, TC = 25°C; Note 3 pulse test | 2 |
| Maximum Instantaneous Reverse Current | iR | | | 15 | mA | Rated dc Voltage, TC = 100°C; Note 3 pulse test | 2 |
## CAD (KiCad official)
- Symbol: `NRVBS540T3G`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: SMC (KiCad packages3D, STEP)
- 3D model files: `nrvbs540t3g-etched.step` / `nrvbs540t3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nrvbs540t3g.step` / `nrvbs540t3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/nrvbs540t3-d.pdf) (5 pp, sha256 `1064a599f53ed9cb`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nrvbs540t3g-datasheet.pdf)