component
NPS1N60S
Public Made by Adomby adom
NH MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNPS1N60S
NH · MOSFETs · TO-252
NPS1N60S from NH, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 2.0 to 4.0 V at ID=250uA. |
| 2 | D | passive | Drain, which is also the exposed tab; drain-source voltage is rated at 600 V, with 1 A continuous drain current at Ta=25 ℃ and 4 A pulsed. |
| 3 | S | passive | Source; the body diode carries up to 1 A continuous forward current (4 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NH |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 1 | A | Ta= 25 ℃ | 1 | ||
| Continuous Drain Current | ID | 0.6 | A | Ta= 100 ℃ | 1 | ||
| Drain Current-Pulsed | IDM | 4 | A | TJ< 150 ℃ | 1 | ||
| Maximum Power Dissipation | PD | 30 | W | Ta= 25 ℃ | 1 | ||
| Derating Factor | DF | 0.24 | W/℃ | Above 25℃ | 1 | ||
| Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature Range | TSTD | -55 | 150 | ℃ | 1 | ||
| Avalanche Current, Single Pulse | IAS | 9 | A | L= 0.5 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | L= 0.5 mH, VDD= 300 V, IAS= 9 A, RG= 10 Ω, Starting Tj=25 ℃, VG= 10 V | 1 | ||
| Drain-Source Breakdown Voltage | BV DSS | 600 | V | VGS=0V,ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS= 600 V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±30 V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 3 | 4 | V | VGS= VDS ID=250uA | 2 |
| Drain-Source On Resistance | RDS(ON) | 8 | 10.5 | Ω | ID= 1 A,VGS= 10 V | 2 | |
| Drain-Source On Resistance | RDS(ON) | 9.2 | 14.07 | Ω | ID= 1 A,VGS= 4.5 V | 2 | |
| Max. Diode Forward Current | IS | 1 | A | 2 | |||
| Max. Pulsed Forward Current | ISM | 4 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.08 | 1.5 | V | ID= 1 A,VGS=0V | 2 | |
| Thermal Resistance Junction To Ambient | RθJA | 62 | ℃/W | Still Air Environment With Ta =25°C | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4.17 | ℃/W | Device Mounted On 1 in2 FR-4 Board With 2oz | 1 |
CAD (KiCad official)
- Symbol:
NPS1N60S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
nps1n60s-etched.step/nps1n60s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nps1n60s.step/nps1n60s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NH datasheet (9 pp, sha256
814ea220e5953924, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).