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NP4446SR-S-G
Public Made by Adomby adom
NATLINEAR MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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NP4446SR-S-G
NATLINEAR · MOSFETs · SOP-8
NP4446SR-S-G from NATLINEAR, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins (pin 1 is next to the package marking dot). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied to the other source pins. |
| 4 | G | input | Gate terminal; gate-source voltage is rated at ±20 V maximum, with VGS(th) of 0.8 V min to 2.2 V max. |
| 5 | D | passive | Drain terminal, tied to the other drain pins; VDS is rated at 30 V and continuous ID at 15 A (TC=25°C). |
| 6 | D | passive | Drain terminal, tied to the other drain pins; VDS is rated at 30 V. |
| 7 | D | passive | Drain terminal, tied to the other drain pins; VDS is rated at 30 V. |
| 8 | D | passive | Drain terminal, tied to the other drain pins; VDS is rated at 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Continuous Drain Current | ID | 15 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 12 | A | TC=70°C | 1 | ||
| Pulsed Drain Current | IDP | 40 | A | 1 | |||
| Avalanche energy | EAS | 50 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 2.1 | W | TC=70°C | 1 | ||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 1 | ||
| Storage temperature | -55 | 150 | ℃ | Ordering information storage temperature | 1 | ||
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | µA | TJ=85°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 0.8 | 1.6 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 6.8 | 8.5 | mΩ | VGS=10V, ID=15A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 9 | 12 | mΩ | VGS=4.5V, ID=11A | 2 | |
| On Status Drain Current | ID(ON) | 40 | A | VDS=10V, VGS=5V | 2 | ||
| Diode Forward Voltage | VSD | 0.82 | 1.1 | V | ISD=1A, VGS=0V | 2 | |
| Diode Continuous Forward Current | IS | 4 | A | 2 | |||
| Gate Resistance | RG | 0.47 | 0.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total gate charge | Qg | 18 | 27 | nC | VGS=10V, VDS=15V, ID=15A | 2 | |
| Reverse Recovery Time | trr | 28 | ns | IF=15A, dI/dt=100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 40 | nC | 2 | |||
| Input capacitance | CISS | 985 | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 | ||
| Output capacitance | COSS | 205 | pF | 2 | |||
| Reverse transfer capacitance | CRSS | 76 | pF | 2 | |||
| Turn-on delay time | td(ON) | 7 | ns | VGS=10V, VDS=15V, RL=1Ω, RG=3Ω | 2 | ||
| Turn-on rise time | tr | 8 | ns | 2 | |||
| Turn-off delay time | tD(OFF) | 22 | ns | 2 | |||
| Turn-off fall time | tf | 6.8 | ns | 2 | |||
| Gate-source charge | Qgs | 2.4 | nC | 2 | |||
| Gate-drain charge | Qgd | 2.3 | nC | 2 | |||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 33 | 40 | ℃/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient (steady-state) | RθJA | 59 | 75 | ℃/W | Steady-State | 2 | |
| Maximum Junction-to-Lead (steady-state) | RθJC | 16 | 24 | ℃/W | Steady-State | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | Maximum Junction-to-Lead Steady-State B RθJC 16 24 A:The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment | 2 |
CAD (KiCad official)
- Symbol:
NP4446SR-S-G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
np4446sr-s-g-etched.step/np4446sr-s-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np4446sr-s-g.step/np4446sr-s-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (8 pp, sha256
e23b16298680cf43, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).