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NP3415EMR-G

Public Made by Adom

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NATLINEAR MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NP3415EMR-G

NATLINEAR · MOSFETs · SOT-23

NP3415EMR-G from NATLINEAR, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±8V (VGS) and the device is specified for operation with gate voltages as low as 1.8V.
2 S passive Source terminal; the device is rated at VDS = -20V with continuous drain current ID = -4A at TA=25℃.
3 D passive Drain terminal; the pulsed drain current is rated at -20A (IDM) and the maximum junction temperature range is -55 to 150℃.

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -8 8 V 1
Continuous Drain Current ID -4 A TA=25℃ 1
Continuous Drain Current ID -3 A TA=70℃ 1
Pulsed Drain Current IDM -20 A 1
Maximum power dissipation PD 1.4 W TA=25℃ 1
Maximum power dissipation PD 0.9 W TA=70℃ 1
Operating junction temperature range Tj -55 150 ℃ 1
Drain-source breakdown voltage BVDSS -20 V VGS=0V, ID=-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS=-20V, VGS=0V 2
Gate-body leakage IGSS -10 10 µA VDS=0V, VGS=±8V 2
Gate threshold voltage VGS(th) -0.4 -0.59 -0.9 V VDS=VGS, ID=-250µA 2
Drain-source on-state resistance RDS(ON) 34 45 mΩ VGS=-4.5V, ID=-4A 2
Drain-source on-state resistance RDS(ON) 44 55 mΩ VGS=-2.5V, ID=-3A 2
Forward transconductance gfs 8 S VGS=-5V, ID=-4A 2
Diode forward voltage VSD -0.81 -1.2 V VGS=0V, Is=-1.25A 2
Input capacitance CISS 751 pF VDS=-10V, VGS=0V, f=1.0MHz 2
Output capacitance COSS 115 pF VDS=-10V, VGS=0V, f=1.0MHz 2
Reverse transfer capacitance CRSS 80 pF VDS=-10V, VGS=0V, f=1.0MHz 2
Turn-on delay time tD(ON) 13 ns VDD=-10V, ID=-2.8A, VGEN=-4.5V, RL=10ohm, RGEN=60ohm 2
Rise time tr 9 ns VDD=-10V, ID=-2.8A, VGEN=-4.5V, RL=10ohm, RGEN=60ohm 2
Turn-off delay time tD(OFF) 19 ns VDD=-10V, ID=-2.8A, VGEN=-4.5V, RL=10ohm, RGEN=60ohm 2
Fall time tf 29 ns VDD=-10V, ID=-2.8A, VGEN=-4.5V, RL=10ohm, RGEN=60ohm 2
Total gate charge Qg 9.3 nC VDS=-10V, ID=-3A, VGS=-4.5V 2
Gate-source charge Qgs 1 nC VDS=-10V, ID=-3A, VGS=-4.5V 2
Gate-drain charge Qgd 2.2 nC VDS=-10V, ID=-3A, VGS=-4.5V 2
Maximum Junction-to-Ambient (≤10s) RθJA 70 90 ℃/W ≤ 10s 2
Maximum Junction-to-Ambient (Steady-State) RθJA 100 125 ℃/W Steady-State 2
Maximum Junction-to-Lead (Steady-State) RθJL 63 80 ℃/W Steady-State 2

CAD (KiCad official)

  • Symbol: NP3415EMR-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: np3415emr-g-etched.step / np3415emr-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np3415emr-g.step / np3415emr-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (5 pp, sha256 be9cdf19c1fbcc2c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF