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NP3090G

NATLINEAR · MOSFETs · TO-252-2L

NP3090G from NATLINEAR, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min, 2 V typ, 2.8 V max at ID=250µA.
2 D passive Drain, connected to the exposed tab and the center-lead stub; VDS max 30 V and continuous ID 90 A at TC=25°C.
3 S passive Source; carries the 90 A continuous drain current at TC=25°C and the body diode forward current IS of 90 A typ.

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 30 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=30V, VGS=0V 2
Zero gate voltage drain current IDSS 30 µA VDS=30V, VGS=0V, TJ=85°C 2
Gate leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate threshold voltage VGS(th) 1.2 2 2.8 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 3.8 5.2 mΩ VGS=10V, ID=20A 2
Drain-source on-state resistance RDS(ON) 6 7.2 mΩ VGS=4.5V, ID=20A 2
On status drain current ID(ON) 90 A VDS=10V, VGS=10V 2
Diode forward voltage VSD 0.8 1.1 V ISD=50A, VGS=0V 2
Diode forward voltage VSD 0.8 1.2 V ISD=90A, VGS=0V 2
Drain-source voltage VDS 30 V TA=25℃ 1
Gate-source voltage VGS -20 20 V TA=25℃ 1
Continuous drain current ID 90 A TC=25°C 1
Continuous drain current ID 70 A TC=100°C 1
Pulsed drain current IDP 200 A 1
Avalanche current IAS 30 A 1
Avalanche energy EAS 112 mJ L=0.5mH 1
Maximum power dissipation PD 85 W TC=25°C 1
Maximum power dissipation PD 44 W TC=100°C 1
Operating junction temperature range Tj -55 150 ℃ 2
Storage temperature -55 150 °C 1
Diode continuous forward current IS 90 A 2
Reverse recovery time trr 34 ns IF=20A, dI/dt=100A/us 2
Reverse recovery charge Qrr 30 nC IF=20A, dI/dt=100A/us 2
Gate resistance RG 0.65 Ω VGS=0V, VDS=0V, f=1MHz 2
Input capacitance CISS 1631 pF VGS=0V, VDS=15V, f=1.0MHz 2
Output capacitance COSS 240 pF VGS=0V, VDS=15V, f=1.0MHz 2
Reverse transfer capacitance CRSS 212 pF VGS=0V, VDS=15V, f=1.0MHz 2
Turn-on delay time tD(ON) 12 ns VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω 2
Turn-on rise time tr 14.5 ns VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω 2
Turn-off delay time tD(OFF) 40 ns VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω 2
Turn-off fall time tf 15 ns VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω 2
Total gate charge Qg 34 nC VGS=10V, ID=20A, VDS=15V 2
Gate-source charge Qgs 4.8 nC VGS=10V, ID=20A, VDS=15V 2
Gate-drain charge Qgd 7.5 nC VGS=10V, ID=20A, VDS=15V 2
Thermal resistance junction to case Rθjc 1.7 ℃/W 2
Thermal resistance junction to ambient Rθja 62.5 ℃/W 2

CAD (KiCad official)

  • Symbol: NP3090G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: np3090g-etched.step / np3090g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np3090g.step / np3090g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (5 pp, sha256 9298ccbdaa1b3b78, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF