component
NP3090G
Public Made by Adomby adom
NATLINEAR MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NP3090G
NATLINEAR · MOSFETs · TO-252-2L
NP3090G from NATLINEAR, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min, 2 V typ, 2.8 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab and the center-lead stub; VDS max 30 V and continuous ID 90 A at TC=25°C. |
| 3 | S | passive | Source; carries the 90 A continuous drain current at TC=25°C and the body diode forward current IS of 90 A typ. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | 30 | µA | VDS=30V, VGS=0V, TJ=85°C | 2 | ||
| Gate leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate threshold voltage | VGS(th) | 1.2 | 2 | 2.8 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | 3.8 | 5.2 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 6 | 7.2 | mΩ | VGS=4.5V, ID=20A | 2 | |
| On status drain current | ID(ON) | 90 | A | VDS=10V, VGS=10V | 2 | ||
| Diode forward voltage | VSD | 0.8 | 1.1 | V | ISD=50A, VGS=0V | 2 | |
| Diode forward voltage | VSD | 0.8 | 1.2 | V | ISD=90A, VGS=0V | 2 | |
| Drain-source voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous drain current | ID | 90 | A | TC=25°C | 1 | ||
| Continuous drain current | ID | 70 | A | TC=100°C | 1 | ||
| Pulsed drain current | IDP | 200 | A | 1 | |||
| Avalanche current | IAS | 30 | A | 1 | |||
| Avalanche energy | EAS | 112 | mJ | L=0.5mH | 1 | ||
| Maximum power dissipation | PD | 85 | W | TC=25°C | 1 | ||
| Maximum power dissipation | PD | 44 | W | TC=100°C | 1 | ||
| Operating junction temperature range | Tj | -55 | 150 | ℃ | 2 | ||
| Storage temperature | -55 | 150 | °C | 1 | |||
| Diode continuous forward current | IS | 90 | A | 2 | |||
| Reverse recovery time | trr | 34 | ns | IF=20A, dI/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 30 | nC | IF=20A, dI/dt=100A/us | 2 | ||
| Gate resistance | RG | 0.65 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Input capacitance | CISS | 1631 | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 | ||
| Output capacitance | COSS | 240 | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 | ||
| Reverse transfer capacitance | CRSS | 212 | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 | ||
| Turn-on delay time | tD(ON) | 12 | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 | ||
| Turn-on rise time | tr | 14.5 | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 | ||
| Turn-off delay time | tD(OFF) | 40 | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 | ||
| Turn-off fall time | tf | 15 | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 | ||
| Total gate charge | Qg | 34 | nC | VGS=10V, ID=20A, VDS=15V | 2 | ||
| Gate-source charge | Qgs | 4.8 | nC | VGS=10V, ID=20A, VDS=15V | 2 | ||
| Gate-drain charge | Qgd | 7.5 | nC | VGS=10V, ID=20A, VDS=15V | 2 | ||
| Thermal resistance junction to case | Rθjc | 1.7 | ℃/W | 2 | |||
| Thermal resistance junction to ambient | Rθja | 62.5 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
NP3090G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
np3090g-etched.step/np3090g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);np3090g.step/np3090g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NATLINEAR datasheet (5 pp, sha256
9298ccbdaa1b3b78, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NP3090G
**NATLINEAR** · MOSFETs · TO-252-2L
NP3090G from NATLINEAR, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min, 2 V typ, 2.8 V max at ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab and the center-lead stub; VDS max 30 V and continuous ID 90 A at TC=25°C. |
| 3 | S | passive | Source; carries the 90 A continuous drain current at TC=25°C and the body diode forward current IS of 90 A typ. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NATLINEAR |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 30 | | | V | VGS=0V, ID=250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | 30 | µA | VDS=30V, VGS=0V, TJ=85°C | 2 |
| Gate leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate threshold voltage | VGS(th) | 1.2 | 2 | 2.8 | V | VDS=VGS, ID=250µA | 2 |
| Drain-source on-state resistance | RDS(ON) | | 3.8 | 5.2 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-source on-state resistance | RDS(ON) | | 6 | 7.2 | mΩ | VGS=4.5V, ID=20A | 2 |
| On status drain current | ID(ON) | 90 | | | A | VDS=10V, VGS=10V | 2 |
| Diode forward voltage | VSD | | 0.8 | 1.1 | V | ISD=50A, VGS=0V | 2 |
| Diode forward voltage | VSD | | 0.8 | 1.2 | V | ISD=90A, VGS=0V | 2 |
| Drain-source voltage | VDS | | | 30 | V | TA=25℃ | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Continuous drain current | ID | | | 90 | A | TC=25°C | 1 |
| Continuous drain current | ID | | | 70 | A | TC=100°C | 1 |
| Pulsed drain current | IDP | | | 200 | A | | 1 |
| Avalanche current | IAS | | | 30 | A | | 1 |
| Avalanche energy | EAS | | | 112 | mJ | L=0.5mH | 1 |
| Maximum power dissipation | PD | | | 85 | W | TC=25°C | 1 |
| Maximum power dissipation | PD | | | 44 | W | TC=100°C | 1 |
| Operating junction temperature range | Tj | -55 | | 150 | ℃ | | 2 |
| Storage temperature | | -55 | | 150 | °C | | 1 |
| Diode continuous forward current | IS | | 90 | | A | | 2 |
| Reverse recovery time | trr | | 34 | | ns | IF=20A, dI/dt=100A/us | 2 |
| Reverse recovery charge | Qrr | | 30 | | nC | IF=20A, dI/dt=100A/us | 2 |
| Gate resistance | RG | | 0.65 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Input capacitance | CISS | | 1631 | | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 |
| Output capacitance | COSS | | 240 | | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 |
| Reverse transfer capacitance | CRSS | | 212 | | pF | VGS=0V, VDS=15V, f=1.0MHz | 2 |
| Turn-on delay time | tD(ON) | | 12 | | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 |
| Turn-on rise time | tr | | 14.5 | | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 |
| Turn-off delay time | tD(OFF) | | 40 | | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 |
| Turn-off fall time | tf | | 15 | | ns | VGS=10V, VDS=15V, RL=20Ω, ID=1A, RG=6Ω | 2 |
| Total gate charge | Qg | | 34 | | nC | VGS=10V, ID=20A, VDS=15V | 2 |
| Gate-source charge | Qgs | | 4.8 | | nC | VGS=10V, ID=20A, VDS=15V | 2 |
| Gate-drain charge | Qgd | | 7.5 | | nC | VGS=10V, ID=20A, VDS=15V | 2 |
| Thermal resistance junction to case | Rθjc | | 1.7 | | ℃/W | | 2 |
| Thermal resistance junction to ambient | Rθja | | 62.5 | | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `NP3090G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `np3090g-etched.step` / `np3090g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `np3090g.step` / `np3090g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [NATLINEAR datasheet](docs/np3090g-datasheet.pdf) (5 pp, sha256 `9298ccbdaa1b3b78`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/np3090g-datasheet.pdf)