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NP2018DR

Public Made by Adom

by adom

NATLINEAR MOSFETs, DFN-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NP2018DR

NATLINEAR · MOSFETs · DFN-6-EP(2x2)

NP2018DR from NATLINEAR, in a DFN-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain (pin 1, marked by laser dot); the part is rated VDS 20V and ID 16A.
2 D passive Drain, same net as pin 1; VDS 20V maximum.
3 G input Gate; VGS maximum ±12V, threshold 0.45V min to 1.55V max at ID=250µA.
4 S passive Source; continuous diode forward current IS is 16A maximum.
5 D passive Drain, same net as pin 1; pulsed drain current IDM 64A.
6 D passive Drain, same net as pin 1; VDS 20V maximum.
7 D passive Exposed center drain pad on the bottom of the package, labeled D in the bottom view.

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package DFN-6-EP(2x2)
Category Transistors/Thyristors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 20 V VGS=0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 µA VDS=20V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate threshold voltage VGS(th) 0.45 1 1.55 V VDS=VGS, ID=250µA 2
Drain-source on-state resistance RDS(ON) 8.6 9.5 mΩ VGS=4.5V, ID=8A 2
Drain-source on-state resistance RDS(ON) 10.7 12.5 mΩ VGS=2.5V, ID=8A 2
Diode forward voltage VSD 1 V VGS=0V, Is=16A 2
Turn-on delay time tD(ON) 10 20 ns VDD=10V, ID=16A, VGEN=4.5V, RGEN=6Ω 2
Rise time tr 11 25 ns VDD=10V, ID=16A, VGEN=4.5V, RGEN=6Ω 2
Turn-off delay time tD(OFF) 35 70 ns VDD=10V, ID=16A, VGEN=4.5V, RGEN=6Ω 2
Fall time tf 30 60 ns VDD=10V, ID=16A, VGEN=4.5V, RGEN=6Ω 2
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -12 12 V 1
Drain current-continuous ID 16 A Tj=125℃ 1
Drain current-pulsed IDM 64 A pulse width≤300μs, duty≤2% (note b) 1
Drain-source diode forward current Is 16 A 1
Maximum power dissipation PD 18 W 1
Operating junction temperature range Tj -55 150 ℃ 1
Thermal resistance junction-to-ambient RthJA 100 ℃/W 2

CAD (KiCad official)

  • Symbol: NP2018DR
  • Footprint: Package_DFN_QFN:DFN-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: DFN-6-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: np2018dr-etched.step / np2018dr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np2018dr.step / np2018dr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (5 pp, sha256 b410593e72d279b8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF