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NM8205A

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Shandong Jingdao Microelectronics MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NM8205A

Shandong Jingdao Microelectronics · MOSFETs · TSSOP-8

NM8205A from Shandong Jingdao Microelectronics, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1/D2 passive Common drain of the two N-channel MOSFETs, tied internally to pin 8; drain-source voltage rated 20 V.
2 S1 passive Source of MOSFET 1; continuous drain current 6.5 A at TA=25℃.
3 S1 passive Source of MOSFET 1, second source pin tied to pin 2.
4 G1 input Gate of MOSFET 1; gate-source voltage max ±12 V, threshold 0.5 to 1.2 V at 250 uA.
5 G2 input Gate of MOSFET 2; gate-source voltage max ±12 V, threshold 0.5 to 1.2 V at 250 uA.
6 S2 passive Source of MOSFET 2, tied to pin 7.
7 S2 passive Source of MOSFET 2; continuous drain current 6.5 A at TA=25℃.
8 D1/D2 passive Common drain of the two N-channel MOSFETs, tied internally to pin 1; drain-source voltage rated 20 V.

Key specifications

Parameter Value
Manufacturer Shandong Jingdao Microelectronics
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 19 25 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 24 40 mΩ VGS=2.5V, ID=4A 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS=±8V, VDS=0V 2
Continuous Source Current IS 6 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDSS 20 V TA=25℃ 1
Gate-Source Voltage VGSS -12 12 V TA=25℃ 1
Continuous Drain Current ID 6.5 A TA=25℃ 1
Continuous Drain Current ID 4.8 A TA=70℃ 1
Pulsed Drain Current IDM 24 A 1
Power Dissipation PD 1.5 W TA=25℃ 1
Operating and Storage Temperature Range TJ,TSTG -50 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RθJA 85 ℃/W 1
Forward Transconductance gfs 20 S VDS=5V, ID=3.5A 2
Total Gate Charge (4.5V) Qg 11.4 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Source Charge Qgs 1.6 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Drain Charge Qgd 2.9 nC VDS=15V, VGS=4.5V, ID=7A 2
Turn-On Delay Time Td(on) 5 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Rise Time Tr 32.4 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Turn-Off Delay Time Td(off) 28 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Fall Time Tf 9 ns VDD=10V, VGS=4.5V, RG=3.3Ω, ID=5A 2
Input Capacitance Ciss 863 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 87 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 71 pF VDS=15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: NM8205A
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: nm8205a-etched.step / nm8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nm8205a.step / nm8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shandong Jingdao Microelectronics datasheet (5 pp, sha256 c4407c0d0a8c9f1a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF