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NIS5420MT7TXG

onsemi · Surge Suppressors · WDFN-10(3x3)

NIS5420MT7TXG from onsemi, in a WDFN-10(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Negative input voltage to the device, used as the internal reference for the IC.
2 dv/dt passive Controls output voltage slew rate at turn-on with an internal capacitor giving about a 2 ms ramp; an external capacitor can be added to lengthen it, or leave open if no extra delay is needed.
3 En/Flt bidirectional Tri-state bidirectional enable/fault pin that is pulled to ground by an open-drain device to shut down the eFuse, reads about 1.4 V in thermal shutdown and about 3 V in normal operation; do not actively drive it or connect a capacitor.
4 ILIM passive A resistor between this pin and the source pin sets the overload and short-circuit current limit levels.
5 ISENSE output Load current monitor output that lets the system monitor load current in real time (1 mA/A typical with RSENSE = 1 kΩ); connect RSENSE to GND.
6 Src power_out Source of the internal power FET and the output terminal of the fuse.
7 Src power_out Source of the internal power FET and the output terminal of the fuse.
8 Src power_out Source of the internal power FET and the output terminal of the fuse.
9 Src power_out Source of the internal power FET and the output terminal of the fuse.
10 Src power_out Source of the internal power FET and the output terminal of the fuse.
11 VCC power_in Positive input voltage to the device (belly pad), operating 8 V to 18 V steady-state.

Key specifications

Parameter Value
Manufacturer onsemi
Package WDFN-10(3x3)
Category TVS/Fuse/Board Level Protection
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage, operating, steady-state VIN -0.6 18 V VCC to GND 3
Input Voltage, transient VIN -0.6 25 V Transient (100 ms) 3
Operating Ambient Temperature Range TA -40 125 °C 3
Operating Junction Temperature Range TJ -40 150 °C 3
Non-operating Temperature Range TSTG -55 155 °C 3
Lead Temperature, Soldering TL 260 °C 10 Sec 3
Total Power Dissipation Pmax 1.39 W TA = 25°C, 4 layer High-K JEDEC JESD51-7 PCB, 100 mm2, 2 oz. Cu 3
Kelvin ON Resistance RDSon 30 39 50 mΩ VCC = 12 V, Tj = 25°C 4
Off State Output Voltage Voff 50 mV VCC = 18 Vdc, VGS = 0 Vdc, RL = ∞ 4
Continuous Current ID 4.6 A TA = 25°C, 100 mm2 copper 4
Continuous Current ID 3.5 A TA = 80°C, minimum copper 4
Shutdown Temperature TSD 150 175 200 °C Verified by design 4
Thermal Shutdown Response Time TSDRes 10 15 20 µs 4
Output Clamping Voltage VClamp1 12.5 14.5 V NIS5420MT2, NIS5420MT7 4
Output Clamping Response Time TClamp_Res 10 µs 4
Undervoltage Lockout VUVLO2 6 6.5 7 V NIS5420MT2, NIS5420MT6, NIS5420MT8 column 4
Kelvin Short Circuit Current Limit ILim-SS 1.76 2.1 2.64 A RLimit = 20 Ω 4
Logic Level Low (Output Disabled) Vin-low 0.35 0.58 0.81 V 4
Logic Level Mid (Thermal Fault, Output Disabled) Vin-mid 0.82 1.4 1.95 V 4
Logic Level High (Output Enabled) Vin-high 1.96 2.6 3 V 4
High State Maximum Voltage Vin-max 2.51 4.6 5 V 4
Logic Low Sink Current Iin-low -15 -25 µA Venable = 0 V 4
Logic High Leakage Current for External Switch Iin-leak 1 µA Venable = 3.3 V 4
Maximum Fanout for Fault Signal Fan 3 Units Total number of chips that can be connected to this pin for simultaneous shutdown 4
Bias Current (Operational) IBias 450 µA 4
Bias Current (Shutdown) IBias 150 µA 4
Minimum Operating Voltage Vmin 7.7 V Notes 3 and 5 4
Current Monitor Sense Accuracy IACC -10 10 % 4
Thermal Resistance, Junction-to-Air RθJA 90 °C/W 4 layer High-K JEDEC JESD51-7 PCB, 100 mm2, 2 oz. Cu 3
Thermal Characterization Parameter, Junction-to-Lead ψJ-L 27.5 °C/W 4 layer High-K JEDEC JESD51-7 PCB, 100 mm2, 2 oz. Cu 3
Thermal Characterization Parameter, Junction-to-Board ψJ-B 27.5 °C/W 4 layer High-K JEDEC JESD51-7 PCB, 100 mm2, 2 oz. Cu 3
Thermal Characterization Parameter, Junction-to-Case Top ψJ-T 7.6 °C/W 4 layer High-K JEDEC JESD51-7 PCB, 100 mm2, 2 oz. Cu 3
Delay Time Tdly 220 µs Enabling of chip to ID = 100 mA with 1 A resistive load 4
Kelvin ON Resistance RDSon 60 mΩ TJ = 140°C 4
Thermal Hysteresis THyst 45 °C Auto-retry part only 4
UVLO Hysteresis VHyst 0.8 V 4
Kelvin Overload Current Limit ILim-OL 4.2 A RLimit = 20 Ω 4
Output Voltage Ramp Time tslew 2 ms VOUT = 1.2 V to 10.8 V with 12 Ω load 4
Current Monitor Sense ISENSE 1 mA/A RSENSE = 1 kΩ 4

CAD (KiCad official)

  • Symbol: NIS5420MT7TXG
  • Footprint: Package_DFN_QFN:WDFN-10-1EP_3x3mm_P0.5mm_EP1.8x2.5mm
  • 3D model: WDFN-10(3x3), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.75 mm nominal WSON height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 70fd2199cbdacd78, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF