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Contents

README

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NHDTC114ETR

Nexperia · Digital Transistors · TO-236AB

NHDTC114ETR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) of the built-in transistor, connected to bias resistor R1 (10 kΩ for NHDTC114ET); the input voltage is limited to -10 V to +40 V for this type.
2 GND power_in Ground (emitter) reference pin of the built-in NPN transistor.
3 O output Output (collector) of the built-in transistor, rated for a collector-emitter voltage of 80 V and an output current of 100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 80 V IC = 100 µA; IE = 0 A 5
Collector-emitter breakdown voltage V(BR)CEO 80 V IC = 2 mA; IB = 0 A 5
Collector-base cut-off current ICBO 100 nA VCB = 80 V; IE = 0 A 5
Collector-emitter cut-off current ICEO 100 nA VCE = 60 V; IB = 0 A 5
Collector-emitter cut-off current at Tj = 150 °C ICEO 5 µA VCE = 60 V; IB = 0 A; Tj = 150 °C 5
Emitter-base cut-off current (NHDTC114ET) IEBO 600 µA VEB = 7 V; IC = 0 A 5
DC current gain (NHDTC114ET) hFE 50 VCE = 5 V; IC = 10 mA 5
Collector-emitter saturation voltage VCEsat 100 mV IC = 10 mA; IB = 0.5 mA 5
Off-state input voltage VI(off) 1.15 0.8 V VCE = 5 V; IC = 100 µA 5
On-state input voltage (NHDTC114ET) VI(on) 2.5 1.8 V VCE = 0.3 V; IC = 10 mA 5
Bias resistor 1 (input) (NHDTC114ET) R1 7 10 13 kΩ See 'Test information' for resistor calculation and test conditions 5
Bias resistor ratio R2/R1 R2/R1 0.8 1 1.2 See 'Test information' for resistor calculation and test conditions 5
Collector capacitance Cc 2.5 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz 5
Collector-base voltage VCBO 80 V open emitter 3
Collector-emitter voltage VCEO 80 V open base 3
Emitter-base voltage VEBO 10 V open collector 3
Input voltage (NHDTC114ET) VI -10 40 V 3
Output current IO 100 mA 3
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper [1] 3
Total power dissipation Ptot 350 mW FR4 PCB, 4-layer copper [2] 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance junction to ambient Rth(j-a) 500 K/W in free air; FR4 PCB, single-sided copper [1] 4
Thermal resistance junction to ambient Rth(j-a) 358 K/W in free air; FR4 PCB, 4-layer copper [2] 4
Thermal resistance junction to solder point Rth(j-sp) 130 K/W 4

CAD (KiCad official)

  • Symbol: NHDTC114ETR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: nhdtc114etr-etched.step / nhdtc114etr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nhdtc114etr.step / nhdtc114etr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 d5f520d252b09191, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF